2N7002KT1G vs 2N7002,215

Dieser detaillierte Vergleich von 2N7002KT1G und 2N7002,215 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002KT1G is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, with both devices sharing identical N-channel MOSFET topology, SOT-23 footprint, and comparable voltage and current ratings. Designers should validate gate threshold spread and thermal derating against the target circuit before committing to volume production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002KT1G

Onsemi

Lifecycle
Active
Stock
2832 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002,215
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V -
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 50 pF @ 10 V
Power Dissipation (Max) 350mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
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