2N7002A-7 vs 2N7002

Dieser detaillierte Vergleich von 2N7002A-7 und 2N7002 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002A-7 is a functionally compatible replacement candidate for the 2N7002 in most low-power switching applications, with identical package footprint, channel configuration, and voltage ratings. Designers should validate gate threshold spread and thermal behavior under their specific drive conditions before committing to volume production.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002A-7

Dioden Incorporated

Lifecycle
Active
Stock
1569 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
Part B

2N7002

STMikroelektronik

Lifecycle
Active
Stock
1470 Stückzahl
Package
SOT-23
Series
Transistoren von FETs, MOSFETs von Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002A-7 2N7002
Part Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 180mA (Ta) 200mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 6Ohm @ 115mA, 5V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 3V @ 250µA
Vgs(Max) ±20V ±18V
Input Capacitance(Ciss)(Max) @ Vds 23 pF @ 25 V 43 pF @ 25 V
Power Dissipation (Max) 370mW (Ta) 350mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - STripFET™
Gate Charge(Qg)(Max) @ Vgs - 2 nC @ 5 V