2N7002KT1G vs 2N7002ET1G

Dieser detaillierte Vergleich von 2N7002KT1G und 2N7002ET1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002KT1G are both N-channel enhancement-mode MOSFETs in the SOT-23 package with matched voltage and current ratings, making them viable functional substitutes in most low-power switching and level-shifting applications. Designers should verify gate threshold and on-resistance tolerances against their specific drive conditions before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002KT1G

Onsemi

Lifecycle
Active
Stock
2832 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002ET1G

Onsemi

Lifecycle
Active
Stock
4059 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Anfrage Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002ET1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 26.7 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare Anfrage