2N7002KT1G vs 2N7002K-7

Dieser detaillierte Vergleich von 2N7002KT1G und 2N7002K-7 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002KT1G are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making them viable functional substitutes in most low-power switching applications. Designers should verify gate threshold tolerances and thermal derating for their specific circuit conditions before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002KT1G

Onsemi

Lifecycle
Active
Stock
2832 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002K-7

Dioden Incorporated

Lifecycle
Active
Stock
5630 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002K-7
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 380mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V 0.3 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 50 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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