AO6601
Omega Semiconductor Inc.
- Lifecycle
- Active
- Stock
- 2207 Stückzahl
- Package
- SOT-457
- Series
- Transistoren von FETs, MOSFETs von Arrays
Dieser detaillierte Vergleich von AO6601 und AO6601_001 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
AO6601 and AO6601_001 share the same dual N-channel MOSFET configuration, package outline, and core electrical characteristics, making AO6601_001 a viable functional substitute for AO6601 in most designs. Designers should confirm the specific ordering suffix requirements and verify any datasheet-level differences before final qualification.
Omega Semiconductor Inc.
Omega Semiconductor Inc.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6601 | AO6601_001 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (Complementary) | Determines the polarity of the MOSFETs and whether the device can be used for complementary switching or level-shifting circuits. |
| Drain-Source Voltage (VDS) | 30 V | 30 V | Sets the maximum voltage the device can block; must exceed the circuit's operating voltage with margin. |
| Continuous Drain Current (ID) | 3.5 A (N) / 2.5 A (P) | 3.5 A (N) / 2.5 A (P) | Defines the maximum continuous current the device can carry; critical for load-driving capability. |
| RDS(on) at VGS = 10 V | 60 mΩ (N) / 90 mΩ (P) | 60 mΩ (N) / 90 mΩ (P) | On-resistance directly affects conduction losses and efficiency; lower values reduce power dissipation. |
| Gate Threshold Voltage (VGS(th)) | 1.5 V (typ) | 1.5 V (typ) | Determines the minimum gate voltage needed to turn on the device; important for logic-level compatibility. |
| Package / Mounting | SOIC-8 (Surface Mount) | SOIC-8 (Surface Mount) | Footprint and mounting style must match the PCB layout for a drop-in replacement. |
| Power Dissipation (Pd) | 1.15 W | 1.15 W | Indicates the maximum thermal dissipation capability; affects reliability under continuous load. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating envelope; must cover the application's ambient and junction temperatures. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AO6601 | AO6601_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.3A | 3.4A, 2.3A |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.4A, 10V | 60mOhm @ 3.4A, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 285pF @ 15V | 285pF @ 15V |
| Power - Max | 1.15W | 1.15W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
AO6601 and AO6601_001 are both N-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor in the same SOT-23 package family. The "_001" suffix denotes a manufacturer ordering/variant code (typically a packing or product-configuration identifier) rather than a different silicon die. Electrical ratings such as VDS, ID, and RDS(on) are the same for both; the distinction lies in the ordering part number and associated packaging/tape-and-reel specification. Designers should confirm the exact suffix meaning on the official AOS datasheet and ordering information before release.
Yes, based on the shared datasheet parameters, both parts share the same N-channel MOSFET characteristics, including the same VDS rating, continuous drain current, and RDS(on) values. Because the electrical die is the same, they are functionally interchangeable in circuit design; the difference is confined to the ordering/packaging variant indicated by the "_001" suffix.
The AO6601 is an N-channel enhancement-mode MOSFET rated for a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of approximately 3.5 A at 25 °C, with a low on-resistance RDS(on) in the tens of milliohms range at VGS = 10 V. Exact values should be taken from the official AOS datasheet, as they are the authoritative source for all limits.
Both AO6601 and AO6601_001 are supplied in the SOT-23 surface-mount package, a compact 3-lead outline widely used for small-signal and low-power switching MOSFETs. The package footprint and pinout are identical between the two ordering variants, so PCB land patterns do not change.
Because both variants share the same die, package, and pinout, AO6601_001 can serve as a drop-in replacement for AO6601 provided the ordering quantity and packaging format (tape-and-reel or bulk) meet the assembly requirements. Verify the suffix definition in the AOS ordering information to confirm the packing specification matches your production needs.
Given their 30 V VDS rating, low RDS(on), and SOT-23 package, both parts are suited to load switching, DC-DC conversion, power management, battery protection, and general-purpose low-voltage switching in portable and consumer electronics. Selection between the two variants depends on ordering/packaging requirements rather than electrical performance.
Authoritative parameters and ordering information are published in the official Alpha & Omega Semiconductor datasheet and product page for the AO6601 family, and are also listed by authorized distributors such as DigiKey and Mouser. Always confirm the suffix meaning and current revision status against these sources before finalizing a design or purchase order.