AO6604
Omega Semiconductor Inc.
- Lifecycle
- Active
- Stock
- 1925 Stückzahl
- Package
- SOT-457
- Series
- Transistoren von FETs, MOSFETs von Arrays
Dieser detaillierte Vergleich von AO6604 und AO6604L_001 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The AO6604L_001 is a functionally compatible candidate for the AO6604, sharing the same dual N-channel MOSFET configuration, complementary P-channel pairing, and SOP-8 footprint. Designers should validate gate threshold and RDS(on) tolerances against the target application before committing to production substitution.
Omega Semiconductor Inc.
Omega Semiconductor Inc.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO6604 | AO6604L_001 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel | N-Channel | Both parts must be the same channel polarity to be functionally interchangeable in a circuit. |
| Drain-Source Voltage (Vds) | 30 V | 30 V | The maximum voltage the device can block; must meet or exceed the circuit's voltage stress. |
| Continuous Drain Current (Id) | 4.5 A | 4.5 A | Determines the load current the MOSFET can carry continuously without overheating. |
| Rds(on) at Vgs = 10 V | 28 mΩ | 28 mΩ | On-resistance directly affects conduction losses and efficiency in switching applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.5 V (typ) | 1.5 V (typ) | Defines the gate voltage at which the device begins to conduct; critical for logic-level drive compatibility. |
| Package | TSOP-6 | TSOP-6 | Footprint and pinout must match for a drop-in replacement on the PCB. |
| Power Dissipation | 1.15 W | 1.15 W | Thermal capability limits how much power the device can safely dissipate in operation. |
| Operating Junction Temperature Range | -55 °C to 150 °C | -55 °C to 150 °C | Ensures the part operates reliably across the application's environmental and thermal conditions. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AO6604 | AO6604L_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel Complementary | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 4.5V Drive | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.4A, 2.5A | 3.4A, 2.5A |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.4A, 4.5V | 60mOhm @ 3.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.8nC @ 4.5V | 3.8nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 320pF @ 10V | 320pF @ 10V |
| Power - Max | 1.1W | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Both are dual N-channel and P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor (AOS) packaged in a standard SOIC-8 outline. They are complementary pairs intended for low-voltage load switching, level shifting, and power management in portable and consumer electronics.
The AO6604L_001 is a variant of the AO6604 that is supplied in tape-and-reel packaging with a defined lead-free/RoHS-compliant finish and a specific moisture sensitivity level (MSL) rating for automated SMT assembly. The electrical ratings and die are the same; the suffix denotes packaging and qualification options rather than different silicon.
Yes. Because the AO6604L_001 uses the same die and ratings as the AO6604, the two are electrically interchangeable. The distinction is in packaging, ordering code, and qualification documentation, so a design that accepts one will accept the other provided the assembly process matches the reel and MSL requirements.
The N-channel and P-channel MOSFETs in the AO6604/AO6604L_001 are rated for a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of approximately 4.5 A at 25 °C, with the exact value depending on the channel and the thermal conditions specified in the AOS datasheet.
Both parts are offered in the SOIC-8 package with the standard 1.27 mm pitch and 3.9 mm body width. The pinout is identical, so the AO6604L_001 is a drop-in replacement for the AO6604 on an existing SOIC-8 land pattern, subject to the reel and MSL handling requirements.
Typical uses include load switches, battery protection, DC-DC converter synchronous rectification, level shifting between logic domains, and signal routing in portable devices, where the complementary N/P pair simplifies bidirectional switching and reduces external component count.
Select the AO6604L_001 when your assembly line requires tape-and-reel feeding and documented MSL/RoHS compliance for automated SMT; select the AO6604 when loose or tube packaging is acceptable. Confirm the exact ordering code and packaging option against the current AOS datasheet and distributor listing before release.