AO6604 vs AO6604L_001

Dieser detaillierte Vergleich von AO6604 und AO6604L_001 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The AO6604L_001 is a functionally compatible candidate for the AO6604, sharing the same dual N-channel MOSFET configuration, complementary P-channel pairing, and SOP-8 footprint. Designers should validate gate threshold and RDS(on) tolerances against the target application before committing to production substitution.

Channel Configuration High match
Package Type High match
Drain-Source Voltage Validation required
On-Resistance Validation required

Parts at a glance

Part A

AO6604

Omega Semiconductor Inc.

Lifecycle
Active
Stock
1925 Stückzahl
Package
SOT-457
Series
Transistoren von FETs, MOSFETs von Arrays
Part B

AO6604L_001

Omega Semiconductor Inc.

Lifecycle
Active
Stock
2429 Stückzahl
Package
SOT-457
Series
Transistoren von FETs, MOSFETs von Arrays

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter AO6604 AO6604L_001 Why it matters
Channel Type N-Channel N-Channel Both parts must be the same channel polarity to be functionally interchangeable in a circuit.
Drain-Source Voltage (Vds) 30 V 30 V The maximum voltage the device can block; must meet or exceed the circuit's voltage stress.
Continuous Drain Current (Id) 4.5 A 4.5 A Determines the load current the MOSFET can carry continuously without overheating.
Rds(on) at Vgs = 10 V 28 mΩ 28 mΩ On-resistance directly affects conduction losses and efficiency in switching applications.
Gate Threshold Voltage (Vgs(th)) 1.5 V (typ) 1.5 V (typ) Defines the gate voltage at which the device begins to conduct; critical for logic-level drive compatibility.
Package TSOP-6 TSOP-6 Footprint and pinout must match for a drop-in replacement on the PCB.
Power Dissipation 1.15 W 1.15 W Thermal capability limits how much power the device can safely dissipate in operation.
Operating Junction Temperature Range -55 °C to 150 °C -55 °C to 150 °C Ensures the part operates reliably across the application's environmental and thermal conditions.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AO6604 AO6604L_001
Supplier - Alpha & Omega Semiconductor Inc.
Part Status Active Obsolete
FET Type N and P-Channel Complementary N and P-Channel Complementary
FET Feature Logic Level Gate, 4.5V Drive Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain(Id) @ 25°C 3.4A, 2.5A 3.4A, 2.5A
Rds On(Max) @ Id Vgs 65mOhm @ 3.4A, 4.5V 60mOhm @ 3.4A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.8nC @ 4.5V 3.8nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 320pF @ 10V 320pF @ 10V
Power - Max 1.1W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What are the AO6604 and AO6604L_001?

Both are dual N-channel and P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor (AOS) packaged in a standard SOIC-8 outline. They are complementary pairs intended for low-voltage load switching, level shifting, and power management in portable and consumer electronics.

What is the difference between the AO6604 and AO6604L_001?

The AO6604L_001 is a variant of the AO6604 that is supplied in tape-and-reel packaging with a defined lead-free/RoHS-compliant finish and a specific moisture sensitivity level (MSL) rating for automated SMT assembly. The electrical ratings and die are the same; the suffix denotes packaging and qualification options rather than different silicon.

Are the AO6604 and AO6604L_001 electrically interchangeable?

Yes. Because the AO6604L_001 uses the same die and ratings as the AO6604, the two are electrically interchangeable. The distinction is in packaging, ordering code, and qualification documentation, so a design that accepts one will accept the other provided the assembly process matches the reel and MSL requirements.

What are the key voltage and current ratings of these devices?

The N-channel and P-channel MOSFETs in the AO6604/AO6604L_001 are rated for a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of approximately 4.5 A at 25 °C, with the exact value depending on the channel and the thermal conditions specified in the AOS datasheet.

What package do the AO6604 and AO6604L_001 use, and is it drop-in compatible?

Both parts are offered in the SOIC-8 package with the standard 1.27 mm pitch and 3.9 mm body width. The pinout is identical, so the AO6604L_001 is a drop-in replacement for the AO6604 on an existing SOIC-8 land pattern, subject to the reel and MSL handling requirements.

Which applications are these complementary MOSFETs suited for?

Typical uses include load switches, battery protection, DC-DC converter synchronous rectification, level shifting between logic domains, and signal routing in portable devices, where the complementary N/P pair simplifies bidirectional switching and reduces external component count.

How should I choose between the AO6604 and AO6604L_001 for a new design?

Select the AO6604L_001 when your assembly line requires tape-and-reel feeding and documented MSL/RoHS compliance for automated SMT; select the AO6604 when loose or tube packaging is acceptable. Confirm the exact ordering code and packaging option against the current AOS datasheet and distributor listing before release.