Part A
AT45DB011D-SH-B
Renesas Electronics Corporation
- Lifecycle
- Active
- Stock
- 5493 Stückzahl
- Series
- Arbeitsspeicher
Replacement verdict
Not a drop-in replacement
The AT45DB161E-SHD-B and AT45DB011D-SH-B are both DataFlash serial memory devices in the same SOIC-8 package family, but they differ fundamentally in density, page size, and command set architecture. The 16-Mbit device offers 512-byte pages and a different internal organization than the 1-Mbit device with 264-byte pages, so firmware, addressing, and buffer configurations cannot be transferred directly. The AT45DB011D-SH-B is not a functional substitute for the AT45DB161E-SHD-B without significant redesign and firmware modification.
Different memory density
Different page size
Different command set
Different supply voltage range
Parts at a glance
Part B
AT45DB161E-SHD-B
Adesto Technologies
- Lifecycle
- Active
- Stock
- 1556 Stückzahl
- Package
- SOIC-8
- Series
- Speicher
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AT45DB161E-SHD-B | AT45DB011D-SH-B | Why it matters |
|---|---|---|---|
| Memory Density | 16 Mbit | 1 Mbit | Density determines total storage capacity; a 16x difference means the two parts are not drop-in substitutes for most applications. |
| Page Size | 512 bytes (528 bytes with ECC) | 256 bytes (264 bytes with ECC) | Page size affects write granularity and buffer requirements; firmware page addressing must match the device. |
| Number of Pages | 4096 | 512 | Page count combined with page size defines total array organization and addressable space. |
| Supply Voltage Range | 2.5 V to 3.6 V | 2.7 V to 3.6 V | The wider low-voltage range of the 16 Mbit part allows operation at 2.5 V, which the 1 Mbit part does not support. |
| Maximum Clock Frequency | 85 MHz | 66 MHz | Higher clock frequency yields faster data throughput; system timing must accommodate the slower device if substituted. |
| Interface Type | SPI (Serial Peripheral Interface) | SPI (Serial Peripheral Interface) | Both use SPI, so bus compatibility is maintained, though command sets and addressing differ by density. |
| Package / Mounting | 8-SOIC (0.209", 5.30mm width), Surface Mount | 8-SOIC (0.209", 5.30mm width), Surface Mount | Identical package and footprint allow physical board compatibility, easing substitution at the PCB level. |
| Operating Temperature Range | -40°C to +85°C | -40°C to +85°C | Matching industrial temperature ranges ensure both parts suit the same environmental conditions. |
| Organization | 2 banks of 2048 pages each | 1 bank of 512 pages | Bank architecture affects concurrent read-while-write operation and firmware addressing logic. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AT45DB011D-SH-B | AT45DB161E-SHD-B |
|---|---|---|
| Part Status | Obsolete | Not For New Designs |
| Base Product Number | AT45DB011 | - |
| Digi Key Programmable | Verified | - |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH | FLASH |
| Memory Size | 1Mbit | 16Mb (528 Bytes x 4096 pages) |
| Memory Organization | 264 Bytes x 512 pages | - |
| Memory Interface | SPI | SPI |
| Clock Frequency | 66 MHz | 85 MHz |
| Write Cycle Time - Word, Page | 4ms | - |
| Voltage - Supply | 2.7V ~ 3.6V | 2.5V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tube | - |
| Write Cycle Time - Word Page | - | 8µs, 4ms |
Frequently asked questions
What are the key differences between the AT45DB161E-SHD-B and the AT45DB011D-SH-B?
The AT45DB161E-SHD-B is a 16-Mbit (2-MByte) DataFlash device, while the AT45DB011D-SH-B is a 1-Mbit (128-KByte) device. Both are SPI-compatible serial flash memories in 8-lead SOIC packages (208-mil body width, "SH" suffix), but they differ in density, page size, and supply voltage range. The AT45DB161E operates from 2.5V to 3.6V, whereas the AT45DB011D operates from 2.7V to 3.6V.
Are the AT45DB161E-SHD-B and AT45DB011D-SH-B pin-compatible?
Yes. Both devices use the standard 8-lead SOIC (0.208" / 5.28 mm body) package with the same pinout: SI, SO, SCK, CS, VCC, GND, and RESET. However, pin compatibility alone does not guarantee functional interchangeability because density, page size, and command set differences must be validated.
What are the page sizes of these two DataFlash devices?
The AT45DB161E-SHD-B has a 528-byte page size (512 bytes plus 16 bytes of SRAM buffer per page) with 4096 pages. The AT45DB011D-SH-B has a 264-byte page size (256 bytes plus 8 bytes) with 512 pages. The differing page sizes affect buffer addressing and programming routines.
Can the AT45DB011D-SH-B be used as a drop-in replacement for the AT45DB161E-SHD-B?
No. Although both are 8-lead SOIC SPI DataFlash devices, the AT45DB011D-SH-B provides only 1 Mbit versus 16 Mbit for the AT45DB161E-SHD-B. The reduced density, different page size, and different command/addressing requirements mean firmware and memory maps must be revalidated; a direct drop-in replacement is not supported.
What supply voltage ranges do these devices support?
The AT45DB161E-SHD-B operates from 2.5V to 3.6V. The AT45DB011D-SH-B operates from 2.7V to 3.6V. Designs operating near the lower 2.5V boundary should account for the narrower range of the AT45DB011D-SH-B.
What are the maximum SPI clock frequencies for these devices?
The AT45DB161E-SHD-B supports SPI clock frequencies up to 85 MHz. The AT45DB011D-SH-B supports SPI clock frequencies up to 66 MHz. System timing and PCB signal integrity should be verified against the respective datasheet limits.
Do both devices support the same operating temperature range?
Both the AT45DB161E-SHD-B and AT45DB011D-SH-B are specified for the industrial temperature range of -40°C to +85°C, as indicated by the "B" suffix in their ordering codes.
What are the typical erase and program operations supported by both devices?
Both devices support page erase, block erase, sector erase, chip erase, and page program operations via the standard DataFlash command set, along with a built-in SRAM buffer for dual-buffering during program/erase. Exact command opcodes and timing parameters differ by density and must be taken from the respective datasheets.