AT45DB321E-SHF-B vs AT45DB011D-SHET-T

Dieser detaillierte Vergleich von AT45DB321E-SHF-B und AT45DB011D-SHET-T bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Not a drop-in replacement

The AT45DB321E-SHF-B and AT45DB011D-SHET-T are not drop-in replacements for one another. The AT45DB321E-SHF-B offers a 32-Mbit density in an 8-SOIC package, while the AT45DB011D-SHET-T provides only 1-Mbit in an 8-SOIC package, so the two devices differ fundamentally in memory capacity, page size, and interface clock rate. Designers must validate timing, command-set compatibility, and PCB layout before considering any substitution.

Different memory density Different page size Different clock frequency Different command set

Parts at a glance

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter AT45DB321E-SHF-B AT45DB011D-SHET-T Why it matters
Memory Density 32 Mbit (4 MB) 1 Mbit (128 KB) Density determines total storage capacity; a 32x difference means these parts are not drop-in substitutes for firmware or data storage sizing.
Page Size 512 bytes (standard) / 528 bytes (binary) 256 bytes (standard) / 264 bytes (binary) Page size affects write granularity and buffer programming; firmware page-addressing logic must match the device page size.
Number of Pages 8192 pages 512 pages Page count combined with page size defines total addressable memory and the address map used by the host controller.
Maximum SPI Clock Frequency 85 MHz 66 MHz SPI clock rate determines maximum data throughput; a slower device may bottleneck system performance if timing is critical.
Supply Voltage Range 2.3 V to 3.6 V 2.7 V to 3.6 V Operating voltage range affects compatibility with low-voltage rails; the wider range of the 321E allows operation down to 2.3 V.
Package / Pin Count 8-lead SOIC (0.208" body) 8-lead SOIC (0.208" body) Package and pinout must match for board-level interchangeability; both share the same 8-lead SOIC footprint here.
Interface Type SPI (Serial Peripheral Interface) SPI (Serial Peripheral Interface) Both use SPI, so the host bus protocol is compatible, though command sets and addressing differ by density.
Operating Temperature Range -40 °C to +85 °C -40 °C to +85 °C Temperature range confirms suitability for industrial environments; identical ratings mean equivalent thermal robustness.
SRAM Data Buffer Size 2 x 512-byte buffers 2 x 256-byte buffers Dual SRAM buffers enable simultaneous read-while-write; buffer size scales with page size and affects streaming performance.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AT45DB321E-SHF-B AT45DB011D-SHET-T
Supplier - Dialog Semiconductor GmbH
Part Status Active Obsolete
Memory Type Non-Volatile Non-Volatile
Memory Format FLASH FLASH
Technology FLASH FLASH
Memory Size 32Mb (528 Bytes x 8192 pages) 1Mb (264 Bytes x 512 pages)
Memory Interface SPI SPI
Clock Frequency 85 MHz 66 MHz
Write Cycle Time - Word Page 8µs, 4ms 4ms
Voltage - Supply 2.3V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC) -40°C ~ 85°C (TC)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What are the key differences between the AT45DB321E-SHF-B and the AT45DB011D-SHET-T?

The AT45DB321E-SHF-B is a 32-Mbit (4-Mbyte) DataFlash device, while the AT45DB011D-SHET-T is a 1-Mbit (128-Kbyte) DataFlash device. They differ in density, page size, and interface configuration, so they are not drop-in replacements for each other.

What is the memory density and organization of each device?

The AT45DB321E-SHF-B provides 32 Mbits organized as 8,192 pages of 512 bytes (or 4,096 pages of 1,024 bytes in dual-page configuration). The AT45DB011D-SHET-T provides 1 Mbit organized as 512 pages of 264 bytes.

What package types do these two devices use?

The AT45DB321E-SHF-B is supplied in an 8-lead SOIC package (208-mil). The AT45DB011D-SHET-T is supplied in an 8-lead SOIC package (150-mil). The package body widths differ, so PCB land patterns are not identical.

What supply voltage range does each device support?

The AT45DB321E-SHF-B operates from 2.3 V to 3.6 V. The AT45DB011D-SHET-T operates from 2.7 V to 3.6 V. A design using the AT45DB011D-SHET-T at 2.5 V would not be compatible with the AT45DB321E-SHF-B's lower limit, but the reverse substitution is voltage-compatible.

What is the maximum SPI clock frequency for each part?

The AT45DB321E-SHF-B supports SPI clock frequencies up to 85 MHz. The AT45DB011D-SHET-T supports SPI clock frequencies up to 66 MHz. System timing budgets must be re-evaluated if substituting one for the other.

Are the command sets and pinouts compatible between the two devices?

Both devices use the Atmel DataFlash SPI command set and share a similar 8-lead pinout (SI, SO, SCK, CS, VCC, GND, plus RESET and WP on some variants). However, page size and density differences mean address lengths and page-boundary handling differ, so firmware must be adjusted when migrating between them.

Can the AT45DB321E-SHF-B be used as a direct replacement for the AT45DB011D-SHET-T?

No. Although both are SPI DataFlash devices, the density (32 Mbit vs 1 Mbit), page size (512/1,024 bytes vs 264 bytes), package width (208-mil vs 150-mil), and maximum clock (85 MHz vs 66 MHz) differ. A direct replacement requires PCB and firmware validation against the respective datasheets.