IRFB7530PBF vs IRFB7545PBF

Dieser detaillierte Vergleich von IRFB7530PBF und IRFB7545PBF bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB7530PBF

Infineon-Technologien

Lifecycle
Active
Stock
4164 Stückzahl
Series
Transistoren von FETs, MOSFETs von einzelnen FETs, MOSFETs
Part B

IRFB7545PBF

Infineon-Technologien

Lifecycle
Active
Stock
5827 Stückzahl
Package
TO-220-3
Series
Transistoren von FETs, MOSFETs von Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB7530PBF IRFB7545PBF
Series HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™
Part Status Not For New Designs Active
Base Product Number IRFB7530 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V -
Vgs(th) (Max) @ Id 3.7V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V -
Power Dissipation (Max) 375W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Packaging Tube -
Current - Continuous Drain(Id) @ 25°C - 95A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 6V, 10V
Rds On(Max) @ Id Vgs - 5.9mOhm @ 57A, 10V
Vgs(th)(Max) @ Id - 3.7V @ 100µA
Gate Charge(Qg)(Max) @ Vgs - 110 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 4010 pF @ 25 V