IRFB7530PBF
Infineon-Technologien
- Lifecycle
- Active
- Stock
- 4164 Stückzahl
- Series
- Transistoren von FETs, MOSFETs von einzelnen FETs, MOSFETs
Dieser detaillierte Vergleich von IRFB7530PBF und IRFB7545PBF bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Infineon-Technologien
Infineon-Technologien
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| Specification | IRFB7530PBF | IRFB7545PBF |
|---|---|---|
| Series | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ |
| Part Status | Not For New Designs | Active |
| Base Product Number | IRFB7530 | - |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | - |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | - |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V | - |
| Power Dissipation (Max) | 375W (Tc) | 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Packaging | Tube | - |
| Current - Continuous Drain(Id) @ 25°C | - | 95A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | - | 6V, 10V |
| Rds On(Max) @ Id Vgs | - | 5.9mOhm @ 57A, 10V |
| Vgs(th)(Max) @ Id | - | 3.7V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 110 nC @ 10 V |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 4010 pF @ 25 V |