JANTX2N6796 vs JANTX2N2060

Dieser detaillierte Vergleich von JANTX2N6796 und JANTX2N2060 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

JANTX2N6796

Microsemi Corporation

Lifecycle
Active
Stock
2949 Stückzahl
Package
TO-205AF-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

JANTX2N2060

Mikrochip-Technologie

Lifecycle
Active
Stock
7218 Stückzahl
Package
TO-78-6
Series
Transistoren, Bipolar (BJT-Arrays)
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification JANTX2N6796 JANTX2N2060
Supplier - Microchip Technology
Series Military, MIL-PRF-19500/557 Military, MIL-PRF-19500/270
Part Status Obsolete Active
Transistor Type - 2 NPN (Dual)
Current - Collector(Ic)(Max) - 500mA
Voltage - Collector Emitter Breakdown(Max) - 60V
Vce Saturation(Max) @ Ib Ic - 300mV @ 5mA, 50mA
Current - Collector Cutoff(Max) - 10µA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce - 50 @ 10mA, 5V
Power - Max - 600mW
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain(Id) @ 25°C 8A (Tc) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 195mOhm @ 8A, 10V -
Vgs(th)(Max) @ Id 4V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 28.51 nC @ 10 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 800mW (Ta), 25W (Tc) -
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