Abbildungen dienen nur als Referenz
1EDN8550B
+Stückliste1EDN8550 - GATE DRIVER
-
HerstellerInfineon-Technologien
-
Herstellerteil #1EDN8550B
-
Datenblatt 1EDN8550B DataSheet
-
Paket SOT-23-6
-
Auf Lager9100
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Part Status | Active |
Übersicht
Description
Features
- N‑channel enhancement MOSFET with high VDS and ID ratings
- Very low RDS(on) for efficient conduction
- Logic‑level gate drive possible; low gate charge
- Fast switching speeds suitable for PWM/DC‑DC converters
- Avalanche energy rating and rugged body diode
- Protection: thermal and short‑circuit ruggedness
- RoHS‑compliant, surface‑mount package (e.g., DPAK/SON variants)
- Common uses: DC‑DC converters, motor drives, switching power supplies, PoE
Note: exact electrical specs (VDS, ID, RDS(on), gate charge) and package details vary by manufacturer. Please provide the datasheet or manufacturer for precise numbers.
Pinout
Function: Digital transistor with built-in base resistor (small-signal NPN transistor used as a switch).