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2N2905A
+StücklisteTRANS PNP 60V 0.6A TO39
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HerstellerSTMikroelektronik
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Herstellerteil #2N2905A
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Datenblatt 2N2905A DataSheet
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Auf Lager29824
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| ProductStatus | Obsolete |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 600 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 60 V |
| VceSaturation(Max)@IbIc | 1.6V @ 50mA, 500mA |
| Current-CollectorCutoff(Max) | 10nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 150mA, 10V |
| Power-Max | 600 mW |
| Frequency-Transition | 200MHz |
| OperatingTemperature | 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-205AD, TO-39-3 Metal Can |
Übersicht
Description
Encased typically in a TO-39 metal package, the 2N2905A can dissipate up to 0.6W of power. It features a DC current gain (h_FE) typically ranging from 100 to 300, depending on the specific operating conditions. This device is often employed in circuits requiring switching, amplification, or signal processing due to its efficient performance over a wide temperature range.
Applications include audio amplifiers, signal processing circuits, and as a switch for small loads. Its complementary NPN transistor counterpart is the 2N2219A, which is often used in push-pull amplifier configurations.
Equivalent
1. PN2905A
2. MPS2905A
3. BC557
4. BC327
5. 2N3906 (with differences in specifications)
6. 2N5401 (for higher voltage applications)
Ensure to check the specific parameters such as current, voltage, and power ratings to confirm suitability for your application.
Features
1. Polarity: PNP.
2. Package Type: Typically available in TO-39 metal can package.
3. Voltage Rating: Collector-Emitter Voltage (V_CE) of up to 60V.
4. Current Rating: Collector current (I_C) maximum of 0.6A.
5. Power Dissipation: Maximum power dissipation of about 0.8W.
6. Transition Frequency: High frequency of approximately 200 MHz.
7. Complementary Pair: Has an NPN complement, the 2N2219A, for applications requiring both polarities.
8. Temperature Range: Operates efficiently within a wide temperature range, typically -55°C to +150°C.
9. Applications: Suitable for switching, amplifier circuits, and as a general-purpose transistor in various electronic projects.
These features make the 2N2905A a versatile component in both consumer electronics and industrial applications, where reliability and performance are crucial.
Pinout
1. Emitter (E) - This pin is responsible for emitting charge carriers (holes in the case of PNP transistors) into the base region.
2. Base (B) - The base pin controls the transistor's operation, allowing current to flow between the collector and emitter based on the input signal here.
3. Collector (C) - This pin collects the charge carriers emitted from the emitter, allowing current to flow through the transistor.
In summary, the 2N2905A has three pins: emitter, base, and collector, with the primary function of amplification or switching in electronic circuits.
Manufacturer
These companies operate globally and supply components to various industries, including automotive, consumer electronics, industrial, and telecommunications. They are involved in the development of technologies that drive innovation in electronics, offering products that range from simple transistors and diodes to complex integrated circuits and microcontrollers. The 2N2905A, being a widely used transistor, is a staple product in their portfolios, demonstrating the versatility and longevity of these companies' offerings in the electronic component market.
Application
1. Switching Applications: Ideal for low to medium current switching.
2. Amplification: Used in audio amplifiers and signal amplification due to its good gain properties.
3. Voltage Regulation: Employed in voltage regulator circuits for stability.
4. Relay Drivers: Suitable for controlling relays and other devices due to its current handling capability.
5. Motor Control: Utilized in driving small motors and actuators.
6. General Purpose: Useful in hobbyist projects and educational experiments due to its availability and ease of use.
These applications benefit from the transistor's robustness and performance characteristics.