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2N7002WT1G
+StücklisteMOSFET N-CH 60V 310MA SC70-3
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HerstellerOnsemi
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Herstellerteil #2N7002WT1G
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Paket SC-70-3
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Auf Lager1759
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 310mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.7 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 24.5 pF @ 20 V |
| PowerDissipation(Max) | 280mW (Tj) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-70-3 (SOT323) |
Übersicht
Description
- Voltage Rating: 60V drain-to-source (VDSS).
- Current Handling: 115mA continuous drain current (ID).
- Low Threshold Voltage: Typically 1V (VGS(th)), making it suitable for 3V/5V logic circuits.
- Low On-Resistance: ~5Ω (RDS(on)) at VGS = 10V.
- Package: SOT-323 (small footprint, surface-mount).
Common uses include switching, load control, and signal amplification in portable electronics, IoT devices, and low-power systems. Its compact size and efficiency make it ideal for space-constrained designs.
For detailed specs, refer to the ON Semiconductor datasheet.
Equivalent
- BS170
- 2N7000
- BSS138 (lower voltage)
- DMN2004DWK
- NDS7002A
These offer similar specs (60V, 115mA, SOT-323 package). Check datasheets for exact compatibility.
Features
- Voltage Rating: 60V (VDSS)
- Current Rating: 115mA (ID)
- Low Threshold Voltage: 1V (VGS(th))
- Low On-Resistance: 5Ω (RDS(on)) at VGS = 10V
- Fast Switching Speed: Ideal for low-power applications
- Small Package: SOT-323 (Space-saving SMD)
- Low Power Consumption: Suitable for battery-operated devices
- ESD Protection: Enhanced reliability
Commonly used in signal switching, load control, and logic-level applications.
Pinout
1. Gate (G) – Controls the switching (input signal).
2. Drain (D) – Connects to the load (output).
3. Source (S) – Ground reference.
Key Features:
- Low threshold voltage (~1V).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID) of ~300mA.
- Used for low-power switching in circuits like logic level shifting, signal switching, and load control.
Compact and efficient for space-constrained designs.
Manufacturer
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They produce components for automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation.
The 2N7002WT1G is a small-signal N-channel MOSFET, commonly used in switching applications.
Application
- Switching circuits: Low-power load switching in digital logic.
- Signal amplification: Small-signal amplification in audio/RF stages.
- Protection circuits: Reverse polarity/ESD protection.
- Interface control: Level shifting (e.g., 3.3V ↔ 5V).
- Portable electronics: Battery-powered devices due to low threshold voltage.
Its compact SOT-323 package suits space-constrained designs like IoT modules, sensors, and consumer electronics.
