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2SA812-T1B-A
+StücklisteBipolar Transistors - BJT
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HerstellerRenesas Electronics
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Herstellerteil #2SA812-T1B-A
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Auf Lager24572
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Spezifikationen
| Attribut | Wert |
Übersicht
Equivalent
- 2SA812 (original part)
- 2SA1015 (common substitute)
- BC557 (general-purpose PNP)
- 2N3906 (lower power alternative)
- KSA1015 (SMD equivalent)
Check pinout, voltage/current ratings, and package compatibility before substitution. For exact matches, refer to datasheets or distributor cross-reference tools.
Features
- Type: PNP
- Voltage (VCEO): -50V
- Current (IC): -0.1A
- Power Dissipation (Pc): 0.3W
- Gain (hFE): 120–400 (high gain)
- Package: SOT-23 (small surface-mount)
- Frequency (fT): ~200MHz (suitable for high-frequency applications)
- Low Noise: Ideal for signal amplification
Commonly used in audio amplifiers, switching circuits, and RF applications due to its high gain and compact size.
Manufacturer
The 2SA812-T1B-A is part of Toshiba's discrete semiconductor lineup, commonly used in amplification and switching applications. Toshiba's components are widely used in consumer electronics, industrial equipment, and automotive systems.
Application
1. Amplification Circuits – Audio and signal amplification in consumer electronics.
2. Switching Applications – Low-power switching in control circuits.
3. Voltage Regulation – Used in power supply circuits for stabilization.
4. Driver Stages – Controls relays, LEDs, or small motors.
Its low noise and high gain make it suitable for small-signal applications in devices like radios, amplifiers, and power management systems.