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2SA812B-T1B-AT
+Stückliste2SA812B-T1B-AT - PNP SILICON EPI
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HerstellerRenesas
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Herstellerteil #2SA812B-T1B-AT
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Paket TO-236-3
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Auf Lager5169
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 90 @ 1mA, 6V |
| Power - Max | 200 mW |
| Frequency - Transition | 180MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
