2SC3357

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2SC3357

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RF TRANS NPN 12V 6.5GHZ SOT-89

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Spezifikationen

Attribut Wert
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 6.5GHz
Noise Figure (d B Typ @ f) 1.8dB @ 1GHz
Power - Max 1.2W
DC Current Gain (h FE) (Min) @ Ic, Vce 50 @ 20mA, 10V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89
Gain 9dB

Übersicht

Description

The 2SC3357 is a high-frequency NPN bipolar junction transistor commonly used in RF amplification applications. It is designed for low noise and high gain performance, making it suitable for use in radio frequency (RF) circuits such as VHF/UHF applications. Key features of the 2SC3357 include a high transition frequency (fT), typically around 4 GHz, and a low noise figure, which makes it ideal for improving signal clarity in sensitive RF receivers.
The transistor is housed in a TO-92 or SOT-23 package, which is compact and suitable for both hobbyist and professional circuit designs. It is often used in pre-amplifiers, oscillators, and other amplification circuits within the VHF/UHF bands. The 2SC3357 can handle a collector current (Ic) of up to 100mA and a collector-emitter voltage (Vce) of 25V. Its excellent performance in RF applications makes it a popular choice among electronics enthusiasts and professionals working in communication technology.

Equivalent

The 2SC3357 is a high-frequency NPN transistor used in RF applications. Equivalent products include the BFQ18, BF199, and 2SC1909. However, when replacing transistors, it's crucial to compare specific parameters like frequency, power ratings, and gain to ensure compatibility with your specific application. Always refer to datasheets for precise matching.

Features

The 2SC3357 is an NPN bipolar junction transistor commonly used in RF amplification applications. Key features include:
1. High-Frequency Performance: It is designed for high-frequency applications, offering excellent performance in the VHF and UHF bands, up to about 1 GHz.
2. Low Noise: The transistor provides low noise figures, making it suitable for use in RF front-end amplifiers where signal clarity is critical.
3. High Gain: It offers a high gain capability, which is beneficial for amplifying weak signals.
4. Collector-Emitter Voltage (Vceo): Typically around 25V, allowing it to handle a moderate level of power.
5. Collector Current (Ic): It can handle a collector current up to 100 mA, suitable for various amplification needs.
6. Package Type: Usually available in a TO-92 package, which is compact and easy to use on printed circuit boards (PCBs).
These features make the 2SC3357 a popular choice for RF amplifier designs in communication equipment, television tuners, and other radio frequency applications.

Pinout

The 2SC3357 is an NPN bipolar junction transistor commonly used in RF amplification applications. It typically comes in a 4-pin package, specifically the SOT-89 package. The pin configuration is as follows:
1. Pin 1 (Emitter): This pin is connected to the emitter of the transistor, which is the terminal that emits carriers (electrons for NPN) into the base region.

2. Pin 2 (Base): The base pin is the control terminal of the transistor, used for triggering and controlling the transistor's operation.
3. Pin 3 (Collector): This is the main terminal that collects carriers, allowing current to flow from collector to emitter when the transistor is in the active region.
4. Pin 4 (Collector): This is the main terminal that collects carriers, allowing current to flow from collector to emitter when the transistor is in the active region.
The 2SC3357 is designed for high-frequency applications, typically in the VHF and UHF bands, and it is known for its low noise figure and high gain.

Manufacturer

The 2SC3357 is a NPN RF transistor commonly used in radio frequency applications. It was manufactured by Toshiba, a Japanese multinational conglomerate known for its diversified products and services, including electronics, semiconductors, and information technology. Toshiba is recognized for its significant contributions to the electronics industry, particularly in the development and production of semiconductors and electronic components. The company has a long history of innovation and is one of the major players in the global electronics market.

Application

The 2SC3357 is a high-frequency NPN bipolar junction transistor primarily used in RF and VHF applications. Its key application areas include:
1. RF Amplifiers: Utilized in low-noise amplifiers and RF front-end stages due to its low noise figure and high gain.

2. Oscillators: Employed in oscillator circuits for generating high-frequency signals.
3. VHF/UHF Equipment: Suitable for use in Very High Frequency (VHF) and Ultra High Frequency (UHF) communication devices.
4. Signal Processing: Used in signal processing circuits for frequency modulation and mixing.
5. Broadcast Equipment: Applicable in radio and TV broadcasting equipment for signal amplification and processing.
Its performance makes it ideal for applications requiring high-frequency stability and low noise.

Package

The 2SC3357 is a bipolar junction transistor (BJT) commonly used for RF amplification. It typically comes in a TO-92 package, which is a standard small plastic package for transistors.

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