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AOD2910
+StücklisteMOSFET N CH 100V 6.5A TO252
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HerstellerOmega Semiconductor Inc.
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Herstellerteil #AOD2910
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Datenblatt AOD2910 DataSheet
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Auf Lager1925
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 6.5A (Ta), 31A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1190 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta), 53.5W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252 (DPAK) |
Übersicht
Description
Equivalent
1. IRF7401 from Infineon Technologies.
2. NTD4906N from ON Semiconductor.
3. FDS6679AZ from ON Semiconductor.
4. Si4848DY from Vishay.
Always verify specifications and footprints to ensure compatibility in your specific application.
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate.
2. Low On-Resistance: It typically offers low on-resistance, enhancing efficiency by reducing power loss during operation.
3. High Current Capability: The AOD2910 can handle significant current loads, making it suitable for high-power applications.
4. Fast Switching: It features fast switching speeds, which are beneficial in applications requiring quick response times.
5. Thermal Performance: Usually designed for good thermal performance, ensuring reliability under various operating conditions.
6. Compact Package: Often available in compact packaging, suitable for space-constrained applications.
Given these features, the AOD2910 is commonly used in power management, motor control, and other applications requiring efficient and reliable electronic switching.