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MOSFET N-CH 800V 17A TO247-3
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HerstellerMicrosemi Corporation
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Herstellerteil #APT17N80BC3G
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Datenblatt APT17N80BC3G DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 290mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 90 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2250 pF @ 25 V |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
