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APT28M120B2
+StücklisteMOSFET N-CH 1200V 29A T-MAX
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HerstellerMikrochip-Technologie
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Herstellerteil #APT28M120B2
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Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package | Tube |
| Series | POWER MOS 8™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 560mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 300 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 9670 pF @ 25 V |
| PowerDissipation(Max) | 1135W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | T-MAX™ [B2] |
