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APT9M100B
+StücklisteMOSFET N-CH 1000V 9A TO247
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HerstellerMikrochip-Technologie
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Herstellerteil #APT9M100B
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Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Series | POWER MOS 8™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.4Ohm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2605 pF @ 25 V |
| Power Dissipation (Max) | 335W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 [B] |
