Abbildungen dienen nur als Referenz
APTGT75A1202G
+StücklisteIGBT MODULE 1200V 110A 357W SP2
-
HerstellerMicrosemi Corporation
-
Herstellerteil #APTGT75A1202G
-
Paket SP2
-
Auf Lager6604
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Obsolete |
| IGBTType | Trench Field Stop |
| Configuration | Half Bridge |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 110 A |
| Power-Max | 357 W |
| Vce(on)(Max)@VgeIc | 2.1V @ 15V, 75A |
| Current-CollectorCutoff(Max) | 50 µA |
| InputCapacitance(Cies)@Vce | 5.34 nF @ 25 V |
| Input | Standard |
| NTCThermistor | No |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | SP2 |