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APTM100A46FT1G
+StücklisteMOSFET 2N-CH 1000V 19A SP1
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HerstellerMicrosemi Corporation
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Herstellerteil #APTM100A46FT1G
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Datenblatt APTM100A46FT1G DataSheet
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Paket SP1
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Auf Lager7581
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package | Bulk |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Half Bridge) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 1000V (1kV) |
| Current-ContinuousDrain(Id)@25°C | 19A |
| RdsOn(Max)@IdVgs | 552mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 5V @ 2.5mA |
| GateCharge(Qg)(Max)@Vgs | 260nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 6800pF @ 25V |
| Power-Max | 357W |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | SP1 |