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APTM100VDA35T3G
+StücklisteMOSFET 2N-CH 1000V 22A SP3
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HerstellerMicrosemi Corporation
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Herstellerteil #APTM100VDA35T3G
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Paket SP-3
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Auf Lager9101
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Series | POWER MOS 7® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain(Id) @ 25°C | 22A |
| Rds On(Max) @ Id Vgs | 420mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 186nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 5200pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
