Abbildungen dienen nur als Referenz
APTM10DHM09TG
+StücklisteMOSFET 2N-CH 100V 139A SP4
-
HerstellerMicrosemi Corporation
-
Herstellerteil #APTM10DHM09TG
-
Datenblatt APTM10DHM09TG DataSheet
-
Paket SP-4
-
Auf Lager2306
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 139A |
| Rds On(Max) @ Id Vgs | 10mOhm @ 69.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 350nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 9875pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
