Abbildungen dienen nur als Referenz
APTM120DDA57T3G
+StücklisteMOSFET 2N-CH 1200V 17A SP3
-
HerstellerMicrosemi Corporation
-
Herstellerteil #APTM120DDA57T3G
-
Datenblatt APTM120DDA57T3G DataSheet
-
Paket SP-3
-
Auf Lager9870
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 17A |
| Rds On(Max) @ Id Vgs | 684mOhm @ 8.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 187nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 5155pF @ 25V |
| Power - Max | 390W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |