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1200V,40A SILICON CARBIDE SCHOTT
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HerstellerANBON SEMICONDUCTOR (INT'L) LIMITED
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Herstellerteil #AS3D040120P2
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Datenblatt AS3D040120P2 DataSheet
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Paket TO-247-3
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Auf Lager5977
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io)(per Diode) | 52A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |