AS4C128M16MD4V-062BAN

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AS4C128M16MD4V-062BAN

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IC DRAM 2GBIT LVSTL 200FBGA

  • HerstellerAlliance Memory, Inc.

  • Herstellerteil #AS4C128M16MD4V-062BAN

  • Auf Lager6342

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4X
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface LVSTL
Write Cycle Time - Word, Page 18ns
Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature -40°C ~ 105°C (TC)
Mounting Type Surface Mount
Package / Case 200-WFBGA
Supplier Device Package 200-FBGA (10x14.5)
Base Product Number AS4C128
Clock Frequency 1.6 GHz
Access Time 3.5 ns
Grade Automotive
Qualification AEC-Q100

Übersicht

Description

The AS4C128M16MD4V-062BAN is a 2Gb DDR4 SDRAM component designed for high-performance applications. Manufactured by Alliance Memory, this chip features a 16-bit data bus and operates at a clock speed of 1600 MHz, effectively providing a data transfer rate of up to 3200 MT/s. It is organized in a 128M x 16-bit configuration.
Key features of the AS4C128M16MD4V-062BAN include low power consumption due to its 1.2V core voltage, making it suitable for energy-efficient systems. It supports multiple operating modes and has a range of programmable features such as CAS latency settings and burst length options, allowing for tailored performance adjustments depending on the application.
The chip is housed in a compact 96-ball FBGA package, offering ease of integration into various hardware designs. It is well-suited for use in consumer electronics, industrial applications, and networking solutions where high data throughput and reliable performance are required. Overall, it provides a balanced combination of speed, efficiency, and versatility.

Equivalent

The AS4C128M16MD4V-062BAN is a 2Gb DDR3L SDRAM, organized as 128M x 16. Equivalent products include:
1. Micron MT41K128M16JT-125:K
2. Samsung K4B2G1646F-BCK0
3. Hynix H5TQ2G63GFR-RDC
These alternatives should match in key specifications such as capacity, organization, and voltage requirements for compatibility. Always verify specific timing and performance requirements to ensure they meet your application's needs.

Manufacturer

The AS4C128M16MD4V-062BAN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products. They focus on producing a wide range of DRAM and SRAM products, including asynchronous SRAMs, synchronous DRAMs (SDR), and low-power DRAMs, among others. The company caters to industries that require reliable and compatible memory solutions for older systems and applications. Their products are commonly used in various sectors such as communications, industrial, medical, automotive, and military. Alliance Memory's offerings are designed to meet the demand for memory components that are no longer produced by the original manufacturers, ensuring continued support and availability for systems that rely on these legacy technologies.

Application

The AS4C128M16MD4V-062BAN is a 2Gb DDR3L SDRAM chip, commonly used in various applications requiring efficient memory solutions. Its primary application areas include:
1. Consumer Electronics: Provides fast memory for devices like smart TVs, set-top boxes, and gaming consoles.
2. Networking Equipment: Supports routers and switches by offering reliable data processing and storage.
3. Industrial Systems: Used in automation systems and control units for efficient real-time data handling.
4. Computing Devices: Enhances performance in laptops, desktops, and all-in-one PCs.
5. Embedded Systems: Employed in embedded applications requiring low power and high-speed memory.
These applications benefit from the chip's low power consumption and high-speed data transfer capabilities.

Package

The AS4C128M16MD4V-062BAN is a DRAM (Dynamic Random Access Memory) chip package type. It typically comes in a 96-ball BGA (Ball Grid Array) package, which is a surface-mount technology used for packaging integrated circuits. This configuration facilitates better performance and space efficiency in electronic devices.

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