AS4C16M16SA-6TIN

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AS4C16M16SA-6TIN

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IC DRAM 256MBIT PAR 54TSOP II

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Attribut Wert
Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM
MemorySize 256Mb (16M x 16)
MemoryInterface Parallel
ClockFrequency 166 MHz
WriteCycleTime-WordPage 12ns
AccessTime 5 ns
Voltage-Supply 3V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 54-TSOP (0.400, 10.16mm Width)

Übersicht

Description

The AS4C16M16SA-6TIN is a type of Synchronous Dynamic Random-Access Memory (SDRAM) component. It is designed to store and retrieve data quickly, making it suitable for applications requiring high-speed data processing. This memory module offers a capacity of 256 Megabits, organized as 16M words by 16 bits, which provides efficient data handling for various computing needs.
Operating with a 3.3V power supply, the AS4C16M16SA-6TIN supports a clock frequency of up to 166 MHz, ensuring rapid access and data transfer rates. This makes it ideal for use in systems demanding fast performance, such as gaming devices, network systems, and high-performance computing environments.
The "-6TIN" designation indicates specific characteristics like temperature range and packaging. It operates in industrial temperature ranges, making it suitable for use in a wide array of environmental conditions. Its plastic Thin Small-Outline Package (TSOP) ensures it fits into compact spaces, reducing the overall footprint in hardware implementations.
Overall, the AS4C16M16SA-6TIN is a versatile and efficient memory solution for high-speed and high-performance applications.

Equivalent

The AS4C16M16SA-6TIN is a 256Mb SDRAM chip. Equivalent products include:
1. Micron MT48LC16M16A2 - 256Mb SDRAM
2. Samsung K4S281632I - 256Mb SDRAM
3. Hynix HY57V561620 - 256Mb SDRAM
These alternatives vary slightly in electrical and timing characteristics, so it's important to verify compatibility with your specific application requirements.

Features

The AS4C16M16SA-6TIN is a 256 Megabit DRAM chip organized as 16M x 16, designed for high-speed applications. It features a 3.3V power supply, providing low power consumption. This DRAM operates with a clock speed of up to 166 MHz, facilitating fast data processing. Its CAS latency is 2 or 3, offering flexibility in performance tuning. The chip incorporates a synchronous interface, utilizing a double data rate (DDR) to optimize speed and efficiency.
Key features include:
1. Density: 256Mb, organized as 16M x 16.
2. Voltage: 3.3V power supply.
3. Speed: Operates at 166 MHz clock speed.
4. Latency: CAS latency of 2 or 3.
5. Interface: Synchronous DRAM with DDR.
6. Package: Available in a 54-pin TSOP II package.
7. Temperature Range: Industrial-grade, suitable for -40°C to 85°C.
These features make the AS4C16M16SA-6TIN suitable for applications requiring reliable and efficient high-speed memory solutions.

Manufacturer

The AS4C16M16SA-6TIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products, including DRAMs and SRAMs. They focus on supporting older technologies that are often used in industrial, communications, automotive, and computing applications. Their product portfolio is designed to be compatible with components that are no longer produced by other manufacturers, ensuring a steady supply for customers who rely on mature technologies.

Application

The AS4C16M16SA-6TIN is a 256Mb SDRAM used in various applications requiring reliable and high-speed memory. It is commonly employed in embedded systems, industrial automation equipment, telecommunications, and networking devices. Its robust performance and reliability make it suitable for automotive systems, where operational integrity is crucial. Additionally, it finds applications in consumer electronics, data storage devices, and medical equipment, where efficient data processing and storage are essential. Its industrial temperature range further extends its usability in harsh environmental conditions.

Package

The AS4C16M16SA-6TIN is a 256Mb SDRAM (synchronous DRAM) chip made by Alliance Memory. It typically comes in a 54-pin TSOP II (Thin Small Outline Package Type II) package.

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