AS4C256M16D3LC-12BIN

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AS4C256M16D3LC-12BIN

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IC DRAM 4GBIT PARALLEL 96FBGA

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Attribut Wert
Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3L
MemorySize 4Gb (256M x 16)
MemoryInterface Parallel
ClockFrequency 800 MHz
WriteCycleTime-WordPage 15ns
AccessTime 20 ns
Voltage-Supply 1.283V ~ 1.45V
OperatingTemperature -40°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Übersicht

Description

The AS4C256M16D3LC-12BIN is a DDR3 SDRAM memory module, designed for high-performance computing applications. It features a 4GB capacity built with 256Mx16-bit configuration, ensuring efficient data handling and processing. This component operates at a voltage of 1.35V, which helps in reducing power consumption and thermal output, making it suitable for energy-efficient systems.
The module supports a clock speed of 800 MHz (DDR3-1600), with a CAS latency of CL11, providing a balance of speed and latency for various applications. The 12BIN marking indicates specific binning for performance consistency. It comes in a standard 78-ball FBGA package, facilitating easy integration into compatible systems.
This memory module is ideal for use in servers, desktops, and embedded systems that require reliable memory performance. Its design adheres to JEDEC standards, ensuring broad compatibility across different platforms. The AS4C256M16D3LC-12BIN is engineered to deliver robust performance, meeting the demands of modern computing environments while maintaining cost-effectiveness.

Equivalent

The AS4C256M16D3LC-12BIN is a DRAM chip from Alliance Memory, specifically a 4Gb DDR3L SDRAM. Equivalent products would include similar DDR3L SDRAM chips from other manufacturers, such as:
1. Micron: MT41K256M16TW-107:P
2. Samsung: K4B4G1646E-BYK0
3. SK Hynix: H5TC4G63AFR-PBA
4. Nanya: NT5CC256M16CP-DI
These chips typically feature similar capacities, voltage, and performance specifications, suitable for equivalent applications.

Features

The AS4C256M16D3LC-12BIN is a 4Gb DDR3L SDRAM memory module designed by Alliance Memory. Key features include:
1. Density and Organization: It has a density of 4Gb (gigabits) and is organized as 256M x 16 bits.

2. Speed and Timing: Operates at a frequency of 1600 Mbps with a CAS latency of 11 cycles.
3. Voltage: Designed for low-voltage operation at 1.35V, supporting energy-efficient performance, with backward compatibility to 1.5V systems.
4. Compatibility: Compliant with the JEDEC DDR3L standard, ensuring broad compatibility with various systems.
5. Packaging: Available in a 96-ball FBGA (Fine Ball Grid Array) package which is compact and suitable for high-density applications.
6. Temperature Range: Supports a standard temperature range of 0°C to 95°C, making it suitable for consumer and industrial applications.
This memory chip is typically used in applications demanding high-speed, efficient memory solutions, such as computers, networking equipment, and industrial machines.

Pinout

The AS4C256M16D3LC-12BIN is a DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip produced by Alliance Memory. It typically comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
Pin Count:
The 96-ball FBGA package has 96 pins (or balls).
Function:
The AS4C256M16D3LC-12BIN is a 4Gb (Gigabit) DDR3 SDRAM device organized as 256M x 16 bits. It is designed for high-performance memory applications, providing a high-speed data transfer rate. Key functions include:
- Data Storage: Temporarily stores data for quick access by the CPU, improving system speed and efficiency.
- High-Speed Operation: Supports high data transfer rates (up to 1600 Mbps per pin).
- Low Voltage Operation: Operates at a low voltage of 1.35V, contributing to reduced power consumption.
- Error Correction (ECC): Supports ECC functionalities in some configurations to ensure data integrity.
This memory is typically used in applications requiring high bandwidth and low latency, such as computing, networking, and graphics.

Manufacturer

The AS4C256M16D3LC-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a company that specializes in providing legacy memory products. They focus on offering a broad range of DRAM and SRAM solutions, including asynchronous SRAMs, synchronous DRAMs (SDRAM), and low-power DRAMs. The company serves markets that require memory solutions for industrial, communications, computing, and consumer applications. By concentrating on legacy memory products, Alliance Memory supports customers who need to maintain the longevity and reliability of their products without having to redesign their systems to accommodate newer memory technologies.

Application

The AS4C256M16D3LC-12BIN is a 4Gb DDR3L SDRAM chip designed for various applications requiring high-speed data processing and efficient power consumption. Common application areas include:
1. Consumer Electronics: Used in devices such as televisions, gaming consoles, and set-top boxes for fast data handling.
2. Computing: Integrated in laptops, desktops, and servers to enhance memory capacity and performance.
3. Networking Equipment: Utilized in routers, switches, and other networking devices for improved data throughput.
4. Telecommunications: Supports infrastructure equipment like base stations for robust data transmission.
5. Industrial Systems: Applied in automation and control systems for reliable and efficient data processing.
These applications benefit from the memory chip’s balance of performance and power efficiency.

Package

The AS4C256M16D3LC-12BIN is a DRAM memory chip. Specifically, it is a 4Gb (Gigabit) DDR3 SDRAM, organized as 256M x 16 bits. The package type for this memory chip is typically a 96-ball FBGA (Fine-Pitch Ball Grid Array), which allows for compact and efficient surface-mounting on circuit boards.

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