Abbildungen dienen nur als Referenz
AT45DB081E-SHN-T
+StücklisteIC FLASH 8MBIT SPI 85MHZ 8SOIC
-
HerstellerAdesto Technologies
-
Herstellerteil #AT45DB081E-SHN-T
-
Paket SOIC-W-8
-
Auf Lager2462
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 8Mb (264 Bytes x 4096 pages) |
| Memory Interface | SPI |
| Clock Frequency | 85 MHz |
| Write Cycle Time - Word Page | 8µs, 4ms |
| Voltage - Supply | 1.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
Übersicht
Description
Notably, it supports Dual-Input, Dual-Output, and Quad-Input, Quad-Output SPI instructions, providing flexibility and faster data transfer rates. The device operates at a wide voltage range from 2.3V to 3.6V and can be used in environments between -40°C to 85°C. This Flash memory is packaged in a compact 8-lead SOIC (Small Outline Integrated Circuit), making it ideal for space-constrained applications.
Applications for the AT45DB081E-SHN-T include consumer electronics, industrial systems, and other areas requiring reliable non-volatile memory storage. Its combination of speed, capacity, and durability makes it a versatile choice for modern electronic devices.
Equivalent
1. Winbond W25Q80DV - 8 Mbit Serial NOR Flash.
2. Adesto AT25SF081 - 8 Mbit Serial Flash.
3. MXIC MX25R8035F - 8 Mbit Low Power Serial NOR Flash.
4. ISSI IS25LP080D - 8 Mbit Serial Flash.
These alternatives offer similar storage capacity and interface options, but differences in voltage, speed, or additional features may exist. Always check datasheets for compatibility.
Features
1. Interface: Supports SPI (Serial Peripheral Interface) for fast data transfer.
2. Dual and Quad I/O: Offers Dual-Input and Quad-Input modes for increased data throughput.
3. Page Erase/Write: Features 256-byte page write and erase capabilities, enhancing data management efficiency.
4. Memory Organization: Comprises 4096 pages of memory, each 256 bytes.
5. Sector Erase: Supports sector and block erase functions to optimize memory usage.
6. Security: Includes a unique device ID, and hardware-controlled data protection features, enhancing security.
7. Low Power Consumption: Designed for low power operation, which is ideal for battery-operated devices.
8. Fast Performance: Offers fast read, write, and erase times, suitable for time-sensitive applications.
9. Endurance: Provides high endurance with 100,000 program/erase cycles.
10. Temperature Range: Operates effectively over a wide temperature range (-40°C to +85°C).
11. Package: Available in an 8-SOIC package for compact design requirements.
These features make it suitable for various applications, including embedded systems, data logging, and wearable devices.
Pinout
1. CS (Chip Select): Activates the device for communication; must be low to select the chip.
2. SCK (Serial Clock): Provides the clock signal for data transfer.
3. SI (Serial Input): Inputs data to the device.
4. SO (Serial Output): Outputs data from the device.
5. WP (Write Protect): Optional input for protecting memory from write operations.
6. RESET: Resets the device, terminating operations and clearing the buffer.
7. VCC: Power supply input, typically 2.5V to 3.6V.
8. GND: Ground connection.
These pins are used for serial communication, data storage, and device control functions. The flash memory is commonly used in applications requiring high-density storage, such as digital cameras, data loggers, and embedded systems.