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AT45DB641E-MHN-T
+StücklisteIC FLASH 64MBIT SPI 85MHZ 8UDFN
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HerstellerRenesas Electronics Corporation
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Herstellerteil #AT45DB641E-MHN-T
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Auf Lager5500
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 64Mbit |
| Memory Organization | 264 Bytes x 32K pages |
| Memory Interface | SPI |
| Write Cycle Time - Word, Page | 8µs, 5ms |
| Voltage - Supply | 1.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 8-UDFN Exposed Pad |
| Supplier Device Package | 8-UDFN (5x6) |
| Base Product Number | AT45DB641 |
| Clock Frequency | 85 MHz |
Übersicht
Description
The AT45DB641E-MHN-T supports both hardware and software data protection, ensuring data integrity and security. It also offers features like rapid page program, block erase functions, and a deep power-down mode for reduced power usage. The device operates within a voltage range of 2.3V to 3.6V, making it suitable for battery-powered and low-voltage systems.
Housed in a compact 8-pin SOIC package, the AT45DB641E-MHN-T is well-suited for applications including consumer electronics, industrial controls, and automotive systems, providing robust performance and flexibility in memory storage solutions.
Equivalent
Features
1. Memory Architecture: Organized into 4096 pages of 264 bytes each, allowing for flexible data management and efficient access.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for fast data transfer and simplified integration with microcontrollers.
3. Data Protection: Includes features like sector protection and hardware/software-controlled write protection to prevent accidental data loss or overwriting.
4. Performance: Offers fast read and write operations, with a maximum clock frequency of up to 85 MHz for high-speed data access.
5. Low Power Consumption: Designed for energy efficiency with minimal power use during standby and active modes, making it suitable for battery-powered devices.
6. Endurance and Reliability: Supports over 100,000 program/erase cycles per page and data retention of up to 20 years, ensuring durability.
7. Temperature Range: Operates effectively in a wide industrial temperature range from -40°C to +85°C.
8. Packaging: Available in a compact, surface-mount package for space-efficient design.
These features make it ideal for applications requiring reliable, high-capacity data storage.
Pinout
- Pin Count: The device typically comes in an 8-pin SOIC or other small form factor packages, but the exact pin count can vary based on the specific package type.
- Pin Functions:
1. CS (Chip Select): Activates the device when low.
2. SCK (Serial Clock): Provides the clock signal for data transfer.
3. SI (Serial Input): Input for sending data to the device.
4. SO (Serial Output): Output for reading data from the device.
5. WP (Write Protect): Used to protect certain sections from being written.
6. RESET: Resets the device when low.
7. VCC: Power supply pin.
8. GND: Ground pin.
This memory device supports standard SPI protocol for communication and provides features like fast read, program, and erase operations, making it suitable for a range of applications that require reliable and high-density flash storage.