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AT49BV322DT-70TU
+StücklisteIC FLASH 32MBIT PARALLEL 48TSOP
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HerstellerMikrochip-Technologie
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Herstellerteil #AT49BV322DT-70TU
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Datenblatt AT49BV322DT-70TU DataSheet
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Auf Lager6694
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | AT49BV322 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH |
| Memory Size | 32Mbit |
| Memory Organization | 2M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 120µs |
| Voltage - Supply | 2.65V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP |
| Packaging | Tray |
| Access Time | 70 ns |
Übersicht
Description
Key features include a fast access time of 70 ns, which enhances system performance, and built-in features like hardware and software write protection for data integrity. The memory supports standard serial and parallel interfaces, making it suitable for various applications, including embedded systems and consumer electronics.
The AT49BV322DT-70TU is notable for its reliability and endurance, capable of withstanding numerous write/erase cycles. It is offered in various packages, facilitating integration into diverse designs. Overall, this Flash memory is an excellent choice for applications requiring efficient storage and quick data retrieval.
Equivalent
1. Microchip: SST39VF3201
2. Spansion: S29GL032N
3. Winbond: W25X32FV
4. Macronix: MX29LV320BTC
Always verify compatibility in terms of voltage, pin configuration, and performance specifications before substitution.
Features
- Architecture: It utilizes a 3V (2.7V to 3.6V) power supply, making it suitable for low-power devices.
- Speed: The chip offers a maximum access time of 70 ns, facilitating quick data retrieval.
- Interface: It features a parallel interface for easy integration into various systems.
- Programming: Supports byte- or word-level programming with a fast programming time of around 10 ms.
- Endurance: The memory can endure up to 10,000 program/erase cycles, ensuring longevity.
- Data Retention: It provides data retention of over 20 years at 125°C.
- Flexible Erase: Offers sector-erase capabilities, allowing for selective memory erasure.
- Packages: Available in industry-standard packages, enhancing compatibility with existing designs.
These features make the AT49BV322DT-70TU suitable for applications like embedded systems, consumer electronics, and automotive controls.
Pinout
The key functions of the pins include:
- Address Pins (A0-A21): Used to select any of the 4M memory locations.
- Data Pins (DQ0-DQ7): Bidirectional data pins for reading and writing data.
- Chip Enable (CE): Activates the memory device.
- Output Enable (OE): Controls the output buffer for data reading.
- Write Enable (WE): Enables writing to the memory.
- Reset (RESET): Resets the device.
- VCC: Power supply pin.
- GND: Ground pin.
The AT49BV322DT-70TU supports various operations like reading, programming, and erasing, making it suitable for applications that require non-volatile memory.