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AUIRF6215S
+StücklisteMOSFET P-CH 150V 13A D2PAK
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HerstellerInfineon-Technologien
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Herstellerteil #AUIRF6215S
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Auf Lager5069
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC,Infineon Technologies |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 290mOhm @ 6.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 860 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Übersicht
Description
- Low on-resistance for high efficiency
- Logic-level gate drive compatibility
- Good switching dv/dt performance and avalanche robustness
- Available in surface-mount packaging suitable for compact designs
How to use: treat as a switch between drain and source; drive the gate with a voltage above threshold (often logic-level ~4–10V), include a gate resistor and proper heat sinking or thermal management.
For exact electrical specs (Vds, Id, Rds(on), Qgs, Qgd) and packaging, consult the datasheet. If you want, I can summarize the precise numbers from the datasheet.
Equivalent
- Package type (e.g., DPAK, SO-8)
- Vds (voltage rating)
- Id (continuous drain current)
- Rds(on)
- Any preferred vendors (TI, OnSemi, Vishay, etc.)
With those, I can list exact cross references. Without specs, suggestions would be guesswork.
Features
- N-channel enhancement-mode power MOSFET
- Very low on-resistance (Rds(on)) for high efficiency
- High drain current capability and robust pulsed current rating
- Logic-level gate drive capability (full enhancement at common gate voltages)
- Fast switching performance with relatively low gate charge
- Good dv/dt immunity and ruggedness for inductive loads
- Avalanche/energy handling for inductive transient protection
- Advanced trench/vertical structure for improved performance
- Favorable thermal characteristics with suitable packages (e.g., D2PAK/TO-263 variants)
- RoHS-compliant and Pb-free
Common applications: DC-DC converters (synchronous buck), high-side/low-side switching, motor drivers. For exact electrical specs (Vds, Id, Rds(on), Qg), refer to the current datasheet.
Pinout
- Pinout (typical): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; tab = Drain.
- Function: N‑channel enhancement‑mode power MOSFET used as a high‑current switch in power electronics (e.g., switching regulators, motor drivers).
Manufacturer
- What kind of company: A US-based fabless semiconductor company that designs and markets power semiconductors, including MOSFETs, IGBTs, and power-management ICs for various applications.
Application
- Automotive power management (load switches, buck converters, battery protection)
- DC-DC converters and VRMs for computers/telecom
- Motor and fan control (DC motors, small BLDC)
- Consumer and industrial power supplies
- High-side/low-side switches in smart power ICs and battery-management circuits
Note: refer to the datasheet for exact voltage/current ratings and packaging.