Abbildungen dienen nur als Referenz
AUIRF7103QTR
+StücklisteMOSFET 2N-CH 50V 3A 8SO
-
HerstellerInfineon-Technologien
-
Herstellerteil #AUIRF7103QTR
-
Datenblatt AUIRF7103QTR DataSheet
-
Paket SOIC-8
-
Auf Lager3161
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain(Id) @ 25°C | 3A |
| Rds On(Max) @ Id Vgs | 130mOhm @ 3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 255pF @ 25V |
| Power - Max | 2.4W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Equivalent
1. IRF3708
2. IRF7413
3. Si4484DY
4. BSC026N03
It's important to compare specific parameters like Rds(on), Vds, Id, and package specifications to ensure they meet your application's requirements. Always check the datasheet for compatibility.
Features
1. N-Channel MOSFET: It is designed as an N-channel device, which is effective for switching and amplifying electronic signals.
2. Voltage and Current Ratings: The device typically has a maximum drain-source voltage (V_DS) of around 30V and can handle a continuous drain current (I_D) depending on the operating conditions.
3. Low On-Resistance: It features a low on-resistance, which reduces power loss and improves efficiency, particularly important in power management applications.
4. Compact Package: The MOSFET is available in a compact surface-mount package, aiding in efficient use of PCB space.
5. Qualified for Automotive Applications: The "AU" prefix indicates it meets the standards necessary for automotive applications, implying robustness and reliability.
6. High-Speed Switching: Designed for rapid switching operations, suitable for power management applications.
These features make the AUIRF7103QTR suitable for use in various applications, including automotive systems, power management, and other electronic devices.
Pinout
1. Source (S): These pins are usually connected to the source terminals of the MOSFET. In an SO-8 package, there are typically multiple source pins to facilitate better current handling.
2. Gate (G): This is the pin used to control the MOSFET. Applying a voltage to the gate allows control over the current flow between the drain and source.
3. Drain (D): This is the pin where the current flows out of the MOSFET. Similar to the source, multiple drain pins may be present to handle higher current.
4. Body/Back Gate: Internally connected, usually not externally accessible in the SO-8 package.
The precise pin configuration, such as which pins are source, gate, or drain, should be verified from the datasheet to ensure accurate connections as it can vary depending on the specific package design by the manufacturer.