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AUIRFN8459TR
+StücklisteMOSFET 2N-CH 40V 50A 8PQFN
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HerstellerInfineon-Technologien
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Herstellerteil #AUIRFN8459TR
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Paket TDFN-8
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Auf Lager6368
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 50A |
| Rds On(Max) @ Id Vgs | 5.9mOhm @ 40A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 60nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 2250pF @ 25V |
| Power - Max | 50W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key points:
- N-channel power MOSFET suitable for DC-DC converters, motor drivers, load switches, and other switching applications.
- TR suffix = Tape & Reel packaging (surface-mount).
- Features trench MOSFET technology for low on-resistance, high current capability, fast switching, and robust body diode performance.
- Used as high-side or low-side switch in compact power stages and synchronous buck/boost regulators.
What to check in the datasheet:
- Maximum drain-source voltage (Vds), continuous drain current (Id), and on-resistance (Rds(on)).
- Gate charge (Qg, Qgs) and switching characteristics.
- Package type, thermal resistance, and operating temperature range.
For exact specs and pinout, consult the official AOS datasheet or distributor pages (e.g., Digi-Key, Mouser).
Equivalent
Features
- Low on-state resistance (Rds(on)) for reduced conduction losses
- Logic-level gate drive (compatible with standard 4.5–5 V logic)
- High switching speed suitable for PWM, DC-DC converters, and motor drive
- Surface-mount package with Tape & Reel (TR) option for automated assembly
- Suitable for automotive/industrial power applications (high efficiency switching, protection against transients)
- Trench/advanced MOSFET technology for improved performance
- RoHS-compliant
Note: Exact electrical ratings (Vds, Id, Rds(on), Qgs, gate threshold, package type) vary by variant. Please consult the datasheet or distributor page for the precise specifications for AUIRFN8459TR in your shipment.
Manufacturer
- What kind of company: A US-based fabless semiconductor company that designs and markets power MOSFETs and other power-management devices, outsourcing fabrication to foundries.
Application
- High-efficiency switching in DC-DC converters (buck/boost) and power supplies
- Synchronous rectification and other power-path switching
- Load-switching and PMIC/power-management circuits
- Motor drive circuits (BLDC/stepper)
- Battery-powered devices, chargers, and adapters
- Power-stage switching in solar/inverter applications
Used as the switching element in compact, high-speed power electronics.