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AUIRFR4104TRL
+StücklisteMOSFET N-CH 40V 42A DPAK
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HerstellerInfineon-Technologien
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Herstellerteil #AUIRFR4104TRL
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Paket TO-252-3
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Auf Lager7534
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR) |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Rds On(Max) @ Id Vgs | 5.5mOhm @ 42A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance(Ciss)(Max) @ Vds | 2950 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Übersicht
Description
Key features of the AUIRFR4104TRL include:
1. N-channel Enhancement Mode: It has an N-channel configuration, which is common in switching applications.
2. Low On-Resistance: Offers reduced power losses, improving efficiency.
3. High-Speed Switching: Suitable for high-frequency operations.
4. Robust Design: Can handle significant power loads, making it suitable for demanding industrial and automotive applications.
5. Thermal Management: Designed to manage heat effectively, ensuring reliability and longevity.
Overall, the AUIRFR4104TRL is a versatile MOSFET used in applications where efficiency and reliability are crucial.
Equivalent
1. Infineon IRFR4104 series
2. Vishay's SIHF4104
3. STMicroelectronics' STP75NF75 or STB75NF75
4. NXP's BUK9575-75A
Ensure to cross-verify electrical characteristics and package compatibility when selecting equivalents, as similar part numbers might have variations in specifications.
Features
1. Technology: Utilizes advanced planar technology, optimizing it for high-speed and high-power applications.
2. Voltage & Current Ratings: Designed with a drain-source voltage (V_DS) of 40V and can handle continuous drain current (I_D) up to 120A.
3. Low On-Resistance: Offers low R_DS(on) resistance, which reduces power loss and enhances efficiency.
4. Ruggedness: Built for high ruggedness, providing stable performance under demanding conditions, making it suitable for automotive applications.
5. Temperature Range: Operates efficiently within a wide temperature range, supporting reliability in extreme environments.
6. Fast Switching: Capable of fast switching speeds, improving overall performance in power management systems.
7. Package Type: Available in a DPAK (TO-252) surface-mount package, ensuring compact design and ease of integration into circuits.
8. Automotive Qualified: AEC-Q101 qualified, ensuring it meets the rigorous standards required for automotive components.
These features make the AUIRFR4104TRL suitable for various automotive and industrial applications that require efficient power management and reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the high-potential contact through which the main current flows when the MOSFET is in the "on" state.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET.
These pins are crucial for the operation of the MOSFET as a switch or amplifier in various circuits. The specific function of the AUIRFR4104TRL is to handle power management tasks efficiently, providing high-speed switching and low on-state resistance, which is essential for minimizing energy loss in automotive power electronics.