BC847CWT1G

Abbildungen dienen nur als Referenz

BC847CWT1G

+Stückliste

TRANS NPN 45V 0.1A SC70-3

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (h FE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number BC847

Übersicht

Description

The BC847CWT1G is a low-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 100 mA, a collector-emitter voltage rating of 45 V, and a maximum power dissipation of 500 mW. The transistor is housed in a SOT-23 package, making it suitable for compact electronic designs.
Key specifications include a DC current gain (h_FE) ranging from 100 to 600, which allows for efficient amplification. The BC847CWT1G operates in a wide temperature range, from -55°C to +150°C, enhancing its versatility in various environmental conditions.
This transistor is commonly used in consumer electronics, automotive applications, and industrial devices due to its reliability and performance. The "T1G" suffix indicates that it is lead-free and compliant with RoHS standards, making it an environmentally friendly choice for modern electronics. Overall, the BC847CWT1G is a popular option for designers seeking efficient and compact amplification solutions.

Equivalent

The BC847CWT1G is a general-purpose NPN transistor. Equivalent products include the BC547, BC548, and 2N3904. For surface-mount alternatives, consider the SOT-23 packaged versions like MMBT3904 or MMBTA47. Always verify specifications to ensure compatibility with your specific application requirements.

Features

The BC847CWT1G is a low-power NPN transistor commonly used in various electronic applications. Key features include:
1. Type: NPN bipolar junction transistor (BJT).
2. Voltage Rating: Maximum collector-emitter voltage (Vce) is 45V.
3. Current Rating: Maximum collector current (Ic) is 100mA.
4. Gain: High current gain (hFE) ranging from 100 to 500, enhancing amplification capabilities.
5. Package: Available in a surface-mount SOT-23 package, facilitating compact designs.
6. Switching Speed: Suitable for high-speed switching applications.
7. Thermal Characteristics: Low thermal resistance, enabling efficient heat dissipation.
8. Applications: Widely used in signal amplification, switching circuits, and general-purpose electronic devices.
Overall, the BC847CWT1G is valued for its reliability and versatility in various consumer electronics and industrial applications.

Pinout

The BC847CWT1G is a NPN bipolar junction transistor (BJT) with a total of 3 pins. Its pin configuration is as follows:
1. Emitter (E) - The pin where the current flows out of the transistor.
2. Base (B) - The pin that controls the transistor; a small current flowing into this pin allows a larger current to flow between the collector and emitter.
3. Collector (C) - The pin where the current flows into the transistor.
This transistor is commonly used for general-purpose switching and amplification applications. It can handle a maximum collector current of 100 mA and has a maximum collector-emitter voltage of 45 V. The BC847CWT1G is often used in low-power electronic circuits.

Manufacturer

The BC847CWT1G is manufactured by ON Semiconductor, a global company specializing in semiconductor products and solutions. ON Semiconductor designs and manufactures a wide range of semiconductor components, including discrete devices, integrated circuits, and system-on-chip solutions. The company serves various markets, such as automotive, industrial, telecommunications, consumer electronics, and computing.
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient solutions and technologies. It plays a significant role in helping customers develop sustainable, high-performance products by providing innovative semiconductor solutions. Their portfolio includes analog, logic, and power management devices, as well as sensors and connectivity products, contributing to advancements in energy efficiency and miniaturization in electronics.
The BC847CWT1G itself is a low-noise NPN transistor used for various applications, including switching and amplification in electronic circuits. It is noted for its small package size and high reliability, making it suitable for modern electronic designs.

Application

The BC847CWT1G is a NPN bipolar junction transistor (BJT) widely used in various applications, including low-power amplification, switching, and signal processing. It is suitable for audio amplifiers, low-current driver applications, and general-purpose switching in consumer electronics. The transistor's specifications make it ideal for use in portable devices, telecommunications, and computer hardware. Its compact size and efficiency also allow for integration in battery-operated devices and LED drivers. Overall, the BC847CWT1G is versatile for both analog and digital circuits.

Package

The BC847CWT1G is typically packaged in a SOT-23 (Small Outline Transistor) surface mount package. This compact design is suitable for space-constrained applications in electronic circuits.

Produkte, die mit BC847CWT1G zusammenhängen