BC856BDW1T1G

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BC856BDW1T1G

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TRANS 2PNP 65V 0.1A SC88/SC70-6

  • HerstellerOnsemi

  • Herstellerteil #BC856BDW1T1G

  • Paket SOT-363-6

  • Auf Lager3990

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType 2 PNP (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 65V
VceSaturation(Max)@IbIc 650mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 220 @ 2mA, 5V
Power-Max 380mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

The BC856BDW1T1G is a PNP bipolar junction transistor (BJT) in a SOT-363 (SC-70-6) package, designed for general-purpose amplification and switching applications. Key features include:
- Type: PNP transistor
- Package: SOT-363 (6-pin, dual-emitter configuration)
- Voltage Ratings: VCEO = -65V, VCBO = -80V
- Current Rating: IC = -100mA
- Power Dissipation: 200mW
- Gain (hFE): 125–450 (at IC = -2mA)
It is commonly used in low-power analog circuits, signal amplification, and switching due to its small size and high gain. The dual-emitter design allows flexibility in circuit design.
Applications: Audio amplifiers, sensor interfaces, and portable electronics.
Manufacturer: ON Semiconductor (now part of onsemi).
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the BC856BDW1T1G (a PNP transistor in SOT-363 package) include:
- BC857BDW1T1G (similar specs, higher current gain)
- MMBT3906DW1T1G (general-purpose PNP)
- 2N3906 (through-hole equivalent, requires adapter)
- BC807-25DW1T1G (higher current rating)
Check datasheets for exact compatibility in your circuit.

Features

The BC856BDW1T1G is a PNP general-purpose transistor in a SOT-363 (SC-70) package. Key features:
- Type: PNP Bipolar Junction Transistor (BJT)
- Voltage Ratings:
- Collector-Base Voltage (V_CBO): -80V
- Collector-Emitter Voltage (V_CEO): -65V
- Emitter-Base Voltage (V_EBO): -5V
- Current Ratings:
- Continuous Collector Current (I_C): -100mA
- Power Dissipation (P_D): 200mW
- Gain (h_FE): 125–450 (at I_C = -2mA, V_CE = -5V)
- Frequency (f_T): 100MHz (typical)
- Package: SOT-363 (SC-70), 6-pin (dual-transistor configuration)
- Applications: Amplification, switching, and general-purpose use in compact circuits.
Compact and efficient, it’s suited for space-constrained designs.

Manufacturer

The BC856BDW1T1G is manufactured by ON Semiconductor, a global leader in energy-efficient electronics.
ON Semiconductor specializes in semiconductor-based solutions, including power management, analog, sensors, and connectivity products. The company serves industries like automotive, industrial, and consumer electronics, known for innovation and reliability.
The BC856BDW1T1G is a PNP transistor in a small SOT-363 package, commonly used in amplification and switching applications.

Application

The BC856BDW1T1G is a PNP transistor in a small SOT-363 package, commonly used in:
1. Amplification – Low-noise signal amplification in audio and RF circuits.
2. Switching – High-speed switching in digital and control circuits.
3. Signal Processing – Used in analog and mixed-signal applications.
4. Portable Electronics – Ideal for space-constrained devices like smartphones and wearables.
5. Automotive Electronics – Supports infotainment and sensor systems.
Its compact size, low power consumption, and high gain make it suitable for modern electronic designs.

Produkte, die mit BC856BDW1T1G zusammenhängen

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