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BLM8G0710S-30PBGY
+StücklisteIC AMP W-CDMA 700MHZ-1GHZ 16HSOP
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HerstellerAmpleon USA Inc.
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Herstellerteil #BLM8G0710S-30PBGY
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Datenblatt BLM8G0710S-30PBGY DataSheet
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Paket SOT-1212-3
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Auf Lager2232
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Ampleon USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Frequency | 700MHz ~ 1GHz |
| P1d B | 14.8dBm |
| Gain | 35.8dB |
| RF Type | W-CDMA |
| Voltage - Supply | 28V |
| Supply Current | 120mA |
| Test Frequency | 1GHz |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the BLM8G0710S-30PBGY include excellent thermal stability, high gain, and an output power capability of up to 30 watts. It is typically used in base stations, repeaters, and other RF infrastructure where reliable performance is critical. The transistor is built using the latest LDMOS technology, which provides a good balance between efficiency, gain, and ruggedness. Additionally, it comes in a compact package, facilitating easy integration into various circuit designs while ensuring space efficiency.
Overall, the BLM8G0710S-30PBGY is a versatile component suitable for modern wireless communication needs, offering superior performance in demanding RF environments.
Equivalent
1. NXP's BLF888A
2. Infineon's PTFC270101M-V1
3. Qorvo's TQP7M9103
When selecting equivalents, verify compatibility in terms of frequency range, power output, and package type with your specific application requirements.
Features
1. Frequency Range: Operates efficiently within the 700 MHz to 1000 MHz range, making it suitable for various wireless communication applications.
2. RF Output Power: Capable of delivering up to 30 watts of RF output power, ensuring robust signal amplification.
3. Efficiency: Designed to provide high efficiency, reducing power consumption and heat generation during operation.
4. Package: Comes in a PBGY package, which is compact and facilitates easier integration into RF systems.
5. High Gain: Offers significant gain, enhancing signal strength and quality.
6. Durability: Built to withstand challenging operating conditions, ensuring reliability across different environments.
7. Applications: Ideal for use in base station transmitters, wireless infrastructure, and other RF amplification needs.
These features make the BLM8G0710S-30PBGY a reliable choice for high-performance RF amplification in various communication systems.
Pinout
1. Pin 1 (Gate): This is the input pin where the RF signal is fed into the transistor. It is the gate terminal of the LDMOS transistor.
2. Pin 2 (Drain): This is the output pin where the amplified RF signal is taken from. It is the drain terminal of the LDMOS transistor.
3. Pin 3 (Source): This acts as the common ground or source terminal. It is usually connected to the ground plane in the application circuit.
4. Flange (Heat Dissipation): This is not a pin but a metal flange that provides mechanical support and helps with heat dissipation.
This transistor is optimized for high linearity and efficiency in broadband RF applications. Always consult the specific datasheet for detailed pin configuration and application information.
Manufacturer
Application
1. Cellular Infrastructure: Enhancing signal transmission in base stations for 4G LTE and 5G networks.
2. Broadcasting: Used in TV and radio transmitters to amplify broadcast signals.
3. Industrial and Medical: Suitable for RF applications in industrial heating and medical equipment.
4. Aerospace and Defense: Utilized in communication systems for military and aerospace sectors.
5. Wi-Fi and WLANs: Supporting high-frequency transmission for wireless local area networks.
Its robust design makes it ideal for high-power, high-efficiency RF amplification needs.