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BQ4010MA-200
+StücklisteIC NVSRAM 64KBIT PARALLEL 28DIP
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HerstellerTexas Instruments
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Herstellerteil #BQ4010MA-200
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Datenblatt BQ4010MA-200 DataSheet
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Paket DIP-28
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Auf Lager9537
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC,Texas Instruments |
| Package / Case | Tube,Tube |
| Part Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 64Kb (8K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 200ns |
| Access Time | 200 ns |
| Voltage - Supply | 4.75V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
