BS2101F-E2

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BS2101F-E2

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IC GATE DRV HI-SIDE/LO-SIDE 8SOP

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Cut Tape (CT)
Part Status Not For New Designs
Driven Configuration High-Side or Low-Side
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 18V
Logic Voltage - VILVIH 1V, 2.6V
Current - Peak Output(Source Sink) 60mA, 130mA
Input Type Non-Inverting
High Side Voltage - Max(Bootstrap) 600 V
Rise / Fall Time(Typ) 60ns, 20ns
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount

Produkte, die mit BS2101F-E2 zusammenhängen