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BSC030N04NSG
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HerstellerInfineon-Technologien
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Herstellerteil #BSC030N04NSG
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Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package / Case | TDSON-8-EP(5x6) |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 3mΩ@10V,50A |
| Drain to Source Voltage (Vdss) | 40V |
| Pd - Power Dissipation | 83W |
| Current - Continuous Drain(Id) | 100A |
| Reverse Transfer Capacitance (Crss @ Vds) | 40pF@20V |
| Input Capacitance(Ciss @ Vds) | 4900pF@20V |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th) @ Id) | 4V |
| Gate Charge(Qg) | 61nC |
Übersicht
Description
BSC030N04NSG is a model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. Specifically, it is an N-channel MOSFET, which means it conducts current when a positive voltage is applied to its gate terminal relative to the source. This device is commonly used in power management and switching applications due to its low ON resistance and efficient performance.
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) rating of 30A, and a maximum power dissipation of 75W. The package type is typically TO-220, allowing for effective thermal management.
BSC030N04NSG is suitable for various applications such as automotive, industrial, and consumer electronics, where efficient control of high power is required. Its performance characteristics make it a reliable choice for circuit designers looking to optimize energy efficiency and thermal performance.
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) rating of 30A, and a maximum power dissipation of 75W. The package type is typically TO-220, allowing for effective thermal management.
BSC030N04NSG is suitable for various applications such as automotive, industrial, and consumer electronics, where efficient control of high power is required. Its performance characteristics make it a reliable choice for circuit designers looking to optimize energy efficiency and thermal performance.
Equivalent
Equivalent products to the BSC030N04NSG chip include the STP30NF10, IRF3205, and FDS6678. These MOSFETs share similar specifications such as voltage ratings and current capabilities, but it's essential to verify their datasheets for precise electrical characteristics and suitability for your specific application. Always consider parameters like RDS(on), gate threshold voltage, and package type when looking for equivalents.
Features
The BSC030N04NSG is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 30A, which makes it ideal for high-power circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 3.0 mΩ, leading to minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.0V to 2.5V, allowing for lower drive voltages, enhancing efficiency.
5. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for fast switching speeds, it is suitable for applications like DC-DC converters and motor drivers.
7. Robustness: Features built-in protection against overvoltage and thermal events.
Overall, the BSC030N04NSG is ideal for power management applications requiring high efficiency and reliability.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 30A, which makes it ideal for high-power circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 3.0 mΩ, leading to minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1.0V to 2.5V, allowing for lower drive voltages, enhancing efficiency.
5. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for fast switching speeds, it is suitable for applications like DC-DC converters and motor drivers.
7. Robustness: Features built-in protection against overvoltage and thermal events.
Overall, the BSC030N04NSG is ideal for power management applications requiring high efficiency and reliability.
Pinout
The BSC030N04NSG is a N-channel MOSFET commonly used in power applications. It has a total of 5 pins.
### Pin Configuration and Functions:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is in the on state. It connects to the load.
3. Source (S): The current enters through this pin when the device is on. It is typically connected to ground in low-side switching applications.
### Additional Pins:
- Tab/Heatsink: Often serves as a connection point for heat dissipation but is not a functional pin in the circuit.
The BSC030N04NSG is optimized for low on-resistance and fast switching, making it suitable for applications like power supplies, motor drives, and other high-efficiency circuits.
### Pin Configuration and Functions:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is in the on state. It connects to the load.
3. Source (S): The current enters through this pin when the device is on. It is typically connected to ground in low-side switching applications.
### Additional Pins:
- Tab/Heatsink: Often serves as a connection point for heat dissipation but is not a functional pin in the circuit.
The BSC030N04NSG is optimized for low on-resistance and fast switching, making it suitable for applications like power supplies, motor drives, and other high-efficiency circuits.
Application
The BSC030N04NSG is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters.
2. Motor Drives: Controlling motors in industrial and automotive applications.
3. Power Distribution: Serving in power management circuits for renewable energy systems.
4. LED Drivers: Providing efficient control in lighting applications.
5. Consumer Electronics: Used in power regulation for various devices.
The MOSFET’s high efficiency and low on-resistance make it suitable for high-performance applications in both consumer and industrial sectors.
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters.
2. Motor Drives: Controlling motors in industrial and automotive applications.
3. Power Distribution: Serving in power management circuits for renewable energy systems.
4. LED Drivers: Providing efficient control in lighting applications.
5. Consumer Electronics: Used in power regulation for various devices.
The MOSFET’s high efficiency and low on-resistance make it suitable for high-performance applications in both consumer and industrial sectors.
Package
The BSC030N04NSG is packaged in a TO-220 format, which is a standard package type used for power MOSFETs. This package provides good thermal performance and ease of mounting, making it suitable for applications requiring efficient heat dissipation.
