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BSC057N08NS3G
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HerstellerInfineon-Technologien
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Herstellerteil #BSC057N08NS3G
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Auf Lager5201
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Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| OperatingTemperature | -55℃~+150℃ |
| RDS(on) | 5.7mΩ@10V,50A |
| DraintoSourceVoltage | 80V |
| Pd-PowerDissipation | 114W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 1000pF@40V |
| InputCapacitance(Ciss@Vds) | 3.9nF@40V |
| Type | 1 N-channel |
| GateThresholdVoltage(Vgs(th)@Id) | 3.5V |
| GateCharge(Qg) | 56nC@10V |
Übersicht
Description
BSC057N08NS3G is a high-performance, low-voltage N-channel MOSFET manufactured by Bourns. It is designed for applications requiring efficient switching and amplification. Key specifications include a maximum drain-source voltage (V_DS) of 75V, a continuous drain current (I_D) of 57A, and a low on-resistance (R_DS(on)), which enhances its efficiency in power management applications.
The device is typically used in power supplies, motor drivers, and DC-DC converters, due to its capability to handle high current levels while minimizing energy losses. It features a compact package design, making it suitable for space-constrained applications. Additionally, the BSC057N08NS3G operates well in high-temperature environments, ensuring reliability and performance in demanding situations.
Overall, this MOSFET is ideal for engineers looking for a reliable component for efficient power handling in their electronic designs.
The device is typically used in power supplies, motor drivers, and DC-DC converters, due to its capability to handle high current levels while minimizing energy losses. It features a compact package design, making it suitable for space-constrained applications. Additionally, the BSC057N08NS3G operates well in high-temperature environments, ensuring reliability and performance in demanding situations.
Overall, this MOSFET is ideal for engineers looking for a reliable component for efficient power handling in their electronic designs.
Equivalent
The BSC057N08NS3G is a N-channel MOSFET from Infineon. Equivalent products can include the IRF3205, FDS6680, and STP75NF75 from other manufacturers, which offer similar specifications in terms of voltage, current, and Rds(on) characteristics. Always check datasheets for specific electrical parameters to ensure compatibility for your application.
Features
The BSC057N08NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and motor control. Key features include:
1. Voltage Rating: 80V, allowing for robust operation in high-voltage environments.
2. Current Rating: Capable of handling continuous drain currents up to 57A, suitable for demanding applications.
3. RDS(on): Low on-resistance of 0.0085 ohms at a gate-source voltage of 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Compatible with low-voltage drive signals, enhancing flexibility in circuit design.
5. Package Type: Available in a TO-220 package, offering effective thermal performance and easy mounting.
6. Fast Switching: High-speed switching capabilities, beneficial for high-frequency applications.
7. Robustness: Designed for high reliability and thermal stability under various operational conditions.
These features make the BSC057N08NS3G suitable for applications such as power supplies, converters, and motor drives, ensuring efficient performance.
1. Voltage Rating: 80V, allowing for robust operation in high-voltage environments.
2. Current Rating: Capable of handling continuous drain currents up to 57A, suitable for demanding applications.
3. RDS(on): Low on-resistance of 0.0085 ohms at a gate-source voltage of 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Compatible with low-voltage drive signals, enhancing flexibility in circuit design.
5. Package Type: Available in a TO-220 package, offering effective thermal performance and easy mounting.
6. Fast Switching: High-speed switching capabilities, beneficial for high-frequency applications.
7. Robustness: Designed for high reliability and thermal stability under various operational conditions.
These features make the BSC057N08NS3G suitable for applications such as power supplies, converters, and motor drives, ensuring efficient performance.
Pinout
The BSC057N08NS3G is an N-channel MOSFET designed for power applications. It typically features a 5-pin configuration in a TO-220 package. The pinout is as follows:
1. Gate (G): Controls the MOSFET's switching state.
2. Drain (D): Connects to the load; the output side of the device.
3. Source (S): Connects to ground or the negative side of the power supply.
Key specifications include a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 57A. It is designed for high-efficiency switching applications, offering low on-resistance for reduced power loss.
1. Gate (G): Controls the MOSFET's switching state.
2. Drain (D): Connects to the load; the output side of the device.
3. Source (S): Connects to ground or the negative side of the power supply.
Key specifications include a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 57A. It is designed for high-efficiency switching applications, offering low on-resistance for reduced power loss.
Manufacturer
The BSC057N08NS3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its focus on innovation and high-quality products that support various sectors, including automotive electronics, renewable energy, and the Internet of Things (IoT). Infineon operates globally and is recognized as a leader in power semiconductor technology, particularly in applications requiring energy efficiency and reliability.
Application
The BSC057N08NS3G is a N-channel MOSFET primarily used in various applications, including power management, automotive systems, and industrial automation. Its low on-resistance and high efficiency make it suitable for DC-DC converters, battery management systems, and motor control circuits. Additionally, it can be utilized in power supplies, lighting systems, and renewable energy systems like solar inverters. The device's robustness and thermal performance also allow for use in consumer electronics and telecom applications.
Package
The BSC057N08NS3G is housed in a TO-220 package. This package type is commonly used for power semiconductors, providing good thermal performance and mechanical stability.
