BSC060N10NS3G

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BSC060N10NS3G

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  • HerstellerInfineon-Technologien

  • Herstellerteil #BSC060N10NS3G

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Spezifikationen

Attribut Wert
Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
OperatingTemperature -55℃~+150℃
RDS(on) 6mΩ@10V,50A
DraintoSourceVoltage 100V
Pd-PowerDissipation 125W
Current-ContinuousDrain(Id) 90A
ReverseTransferCapacitance(Crss@Vds) 25pF
InputCapacitance(Ciss@Vds) 4.9nF
GateCharge(Qg) 68nC@10V
Number 1 N-channel

Übersicht

Description

The BSC060N10NS3G is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications. It features low on-resistance, making it suitable for use in power management circuits, DC-DC converters, and various switching applications. The device has a maximum drain-source voltage of 100V and a continuous drain current rating of up to 60A, which enables it to handle substantial power loads effectively.
Key characteristics include fast switching speeds and low gate charge, which contribute to improved efficiency and reduced heat generation during operation. The BSC060N10NS3G is housed in a DPAK package, facilitating easy integration into printed circuit boards (PCBs).
This MOSFET is often used in automotive applications, industrial systems, and renewable energy solutions, where reliability and performance are critical. Its robust specifications and advanced technology make it a popular choice among designers looking for efficient power regulation solutions.

Equivalent

The BSC060N10NS3G is an N-channel MOSFET. Equivalent products include:
1. IRF1404
2. STP60NF06
3. AOD600V
4. FQP60N06L
Always verify specifications such as voltage, current ratings, and Rds(on) before substitution.

Features

The BSC060N10NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: 100V breakdown voltage, suitable for high-voltage applications.
- Continuous Drain Current: Up to 60A, allowing for significant current handling capabilities.
- RDS(on): Low on-resistance (typically around 6 mΩ), which minimizes conduction losses and improves efficiency.
- Gate Threshold Voltage: Low gate voltage requirements facilitate easier driving and control.
- Package: Available in a compact TO-220 package, enabling efficient thermal management.
- Fast Switching: Designed for fast switching applications, reducing switching losses in circuits.
- High Reliability: Built with robust construction, suitable for automotive and industrial applications.
This combination of features makes the BSC060N10NS3G ideal for applications including power supplies, motor control, and DC-DC converters.

Pinout

The BSC060N10NS3G is a power MOSFET manufactured by Infineon Technologies. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body Diode: Integrated into the MOSFET structure, allows current to flow in the reverse direction when the MOSFET is off.
This component is designed for high-efficiency applications in power management, such as in DC-DC converters and motor drivers. It features low on-resistance and fast switching capabilities, making it suitable for various power electronic applications.

Manufacturer

The BSC060N10NS3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power management, microcontrollers, sensors, and security solutions.
Infineon plays a crucial role in the semiconductor industry, focusing on high-performance and energy-efficient products that support advancements in technology and sustainability. The company emphasizes innovation, particularly in areas such as electric mobility, energy efficiency, and the Internet of Things (IoT). With a robust portfolio, Infineon serves a wide range of markets, contributing to the development of smart technologies and enhancing the efficiency of electronic systems.

Application

The BSC060N10NS3G is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Efficiently managing power conversion in devices.
2. DC-DC Converters: Used in step-up or step-down converters for various electronic devices.
3. Motor Control Circuits: Utilized in driving motors for robotics and industrial applications.
4. LED Lighting: Employed in high-efficiency LED drivers.
5. Consumer Electronics: Found in devices requiring efficient power switching and regulation.
Its high efficiency and fast switching capabilities make it suitable for these applications.

Package

The BSC060N10NS3G is packaged in a TO-220 form factor. This package type is designed for efficient thermal management and is commonly used for power semiconductor applications.

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