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BSC060N10NS3G
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HerstellerInfineon-Technologien
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Herstellerteil #BSC060N10NS3G
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Auf Lager9577
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7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
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Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| OperatingTemperature | -55℃~+150℃ |
| RDS(on) | 6mΩ@10V,50A |
| DraintoSourceVoltage | 100V |
| Pd-PowerDissipation | 125W |
| Current-ContinuousDrain(Id) | 90A |
| ReverseTransferCapacitance(Crss@Vds) | 25pF |
| InputCapacitance(Ciss@Vds) | 4.9nF |
| GateCharge(Qg) | 68nC@10V |
| Number | 1 N-channel |
Übersicht
Description
Key characteristics include fast switching speeds and low gate charge, which contribute to improved efficiency and reduced heat generation during operation. The BSC060N10NS3G is housed in a DPAK package, facilitating easy integration into printed circuit boards (PCBs).
This MOSFET is often used in automotive applications, industrial systems, and renewable energy solutions, where reliability and performance are critical. Its robust specifications and advanced technology make it a popular choice among designers looking for efficient power regulation solutions.
Equivalent
1. IRF1404
2. STP60NF06
3. AOD600V
4. FQP60N06L
Always verify specifications such as voltage, current ratings, and Rds(on) before substitution.
Features
- Voltage Rating: 100V breakdown voltage, suitable for high-voltage applications.
- Continuous Drain Current: Up to 60A, allowing for significant current handling capabilities.
- RDS(on): Low on-resistance (typically around 6 mΩ), which minimizes conduction losses and improves efficiency.
- Gate Threshold Voltage: Low gate voltage requirements facilitate easier driving and control.
- Package: Available in a compact TO-220 package, enabling efficient thermal management.
- Fast Switching: Designed for fast switching applications, reducing switching losses in circuits.
- High Reliability: Built with robust construction, suitable for automotive and industrial applications.
This combination of features makes the BSC060N10NS3G ideal for applications including power supplies, motor control, and DC-DC converters.
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body Diode: Integrated into the MOSFET structure, allows current to flow in the reverse direction when the MOSFET is off.
This component is designed for high-efficiency applications in power management, such as in DC-DC converters and motor drivers. It features low on-resistance and fast switching capabilities, making it suitable for various power electronic applications.
Manufacturer
Infineon plays a crucial role in the semiconductor industry, focusing on high-performance and energy-efficient products that support advancements in technology and sustainability. The company emphasizes innovation, particularly in areas such as electric mobility, energy efficiency, and the Internet of Things (IoT). With a robust portfolio, Infineon serves a wide range of markets, contributing to the development of smart technologies and enhancing the efficiency of electronic systems.
Application
1. Switching Power Supplies: Efficiently managing power conversion in devices.
2. DC-DC Converters: Used in step-up or step-down converters for various electronic devices.
3. Motor Control Circuits: Utilized in driving motors for robotics and industrial applications.
4. LED Lighting: Employed in high-efficiency LED drivers.
5. Consumer Electronics: Found in devices requiring efficient power switching and regulation.
Its high efficiency and fast switching capabilities make it suitable for these applications.