BSC077N12NS3G

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BSC077N12NS3G

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Spezifikationen

Attribut Wert
Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
OperatingTemperature -55℃~+150℃
DraintoSourceVoltage 120V
Pd-PowerDissipation 139W
Type 1 N-channel

Übersicht

Description

BSC077N12NS3G is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It is part of the family of devices that provide efficient switching capabilities, making it ideal for use in power supplies, converters, and motor control systems.
Key features of the BSC077N12NS3G include a low on-resistance, which minimizes power loss during operation, and a high voltage rating, making it suitable for handling significant voltage levels. Its fast switching speed allows for improved performance in high-frequency applications.
Typically, this MOSFET is utilized in a variety of electronic devices and systems, helping to enhance energy efficiency and thermal management. The device is packaged in a compact format, facilitating integration into various circuit designs while ensuring reliable performance under demanding conditions. Overall, the BSC077N12NS3G is a versatile component for engineers seeking robust solutions in power electronics.

Equivalent

The BSC077N12NS3G is a N-channel MOSFET typically used for power management applications. Equivalent products include the IRF3205, IPB180N10N3, and STP75NF75. These alternatives should match or exceed the voltage and current ratings while considering specific characteristics like R_DS(on) and gate threshold voltage for optimal performance in your application. Always verify compatibility with datasheets before substitution.

Features

The BSC077N12NS3G is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 120V, suitable for various applications.
2. Current Rating: Continuous drain current (I_D) of 77A, enabling robust performance in power circuits.
3. On-Resistance: Low R_DS(on) of approximately 9.5 mΩ at V_GS = 10V, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, facilitating easy driving with standard logic levels.
5. Fast Switching Speed: Designed for rapid switching applications, ideal for power management and converter circuits.
6. Package Type: Housed in a DPAK package for efficient thermal dissipation and ease of integration into PCB designs.
7. RoHS Compliance: Environmentally friendly construction, complying with restrictions on hazardous substances.
These features make the BSC077N12NS3G suitable for applications such as DC-DC converters, motor drives, and power supply circuits.

Pinout

The BSC077N12NS3G is an N-channel MOSFET from Infineon Technologies featuring a TO-220 package. It has a total of 3 pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the load connects. Current flows from the drain when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the load. It is the terminal through which the current exits the MOSFET.
The BSC077N12NS3G is designed for various applications, including power management and switching, with a maximum drain-source voltage of 120V and a continuous drain current of 77A.

Manufacturer

The BSC077N12NS3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensor systems. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency and enabling secure connectivity. Infineon is known for its innovation in power management and efficient energy solutions, making significant contributions to the development of technologies for applications like electric vehicles, renewable energy, and the Internet of Things (IoT).

Application

The BSC077N12NS3G is a N-channel MOSFET primarily used in power management applications. Its key areas include:
1. DC-DC Converters: Efficient switching in power supplies.
2. Motor Drives: Control of electric motors in industrial and automotive applications.
3. Power Management Circuits: Regulation and conversion of voltage levels.
4. LED Drivers: Providing reliable current control for LED lighting.
5. Battery Power Systems: Enhancing energy efficiency in battery-operated devices.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.

Package

The BSC077N12NS3G is typically packaged in a DPAK (TO-252) or similar surface-mount package type. This package provides efficient thermal performance and is designed for easy mounting on PCBs.

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