BSC160N10NS3G

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BSC160N10NS3G

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  • HerstellerInfineon-Technologien

  • Herstellerteil #BSC160N10NS3G

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Spezifikationen

Attribut Wert
Manufacturer Infineon Technologies
Package TDSON-8-EP(5x6)
OperatingTemperature -55℃~+150℃
RDS(on) 33mΩ@6V,16A
DraintoSourceVoltage 100V
Pd-PowerDissipation 60W
Current-ContinuousDrain(Id) 42A
ReverseTransferCapacitance(Crss@Vds) 11pF
GateThresholdVoltage(Vgs(th)@Id) 3.5V@33uA
GateCharge(Qg) 25nC@10V
Number 1 N-channel
InputCapacitance(Ciss) 1.7nF
OutputCapacitance(Coss) 320pF

Übersicht

Description

BSC160N10NS3G is a course designed to introduce students to fundamental concepts in biological sciences. It typically covers key topics such as cellular biology, genetics, ecology, and evolutionary biology. The course may also explore the scientific method, laboratory techniques, and the importance of biology in real-world applications.
Students engage in lectures, discussions, and hands-on labs to enhance their understanding of biological systems and processes. This course aims to develop critical thinking skills and a scientific approach to problem-solving in biological contexts. It may serve as a foundational course for those pursuing further studies in biology, health sciences, or related fields.
Overall, BSC160N10NS3G provides a comprehensive overview of biological principles and prepares students for more advanced topics in the field.

Equivalent

The BSC160N10NS3G is an N-channel MOSFET. Equivalent products include the IRF3205, STP200N10F3, and the FDS6672. When selecting an equivalent, ensure they match specifications like voltage, current rating, RDS(on), and package type for optimal performance. Always verify datasheets to confirm compatibility.

Features

The BSC160N10NS3G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 160A, allowing for high-power operations.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, reducing power loss during operation and improving efficiency.
4. Fast Switching: The device supports fast switching speeds, which is essential for high-frequency applications.
5. Thermal Performance: It features excellent thermal characteristics, ensuring reliable performance even under high-heat conditions.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and automotive applications.
Overall, the BSC160N10NS3G combines high power handling with efficient thermal management.

Pinout

The BSC160N10NS3G is a N-channel MOSFET designed for applications such as power management and switching. It features a total of three pins.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is turned on.
3. Source (S): The source pin is where the current exits the MOSFET.
The device is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for various power applications.

Manufacturer

The BSC160N10NS3G is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Germany. Founded in 1999, Infineon specializes in the design, manufacture, and marketing of a wide range of semiconductor solutions. Their products are widely used in automotive, industrial power control, and chip card and security applications.
Infineon focuses on developing innovative technologies that enhance energy efficiency, safety, and connectivity. The company is a key player in the power semiconductor market, providing devices such as MOSFETs, IGBTs, and drivers, which are essential for various applications including renewable energy systems, electric vehicles, and consumer electronics.
Overall, Infineon is recognized for its commitment to advancing semiconductor technology and sustainability, making it a significant contributor to the electronics industry globally.

Application

The BSC160N10NS3G is an N-channel MOSFET used in various application areas, including power management, motor control, and automotive systems. It is ideal for high-efficiency switching applications, such as DC-DC converters and power supplies, due to its low on-resistance and fast switching capabilities. Additionally, it is utilized in industrial automation, renewable energy systems (like solar inverters), and consumer electronics, where reliable performance and thermal efficiency are crucial. Its robustness makes it suitable for demanding environments in both commercial and industrial settings.

Package

The BSC160N10NS3G is packaged in a TO-220 form factor, which is a standard package for power transistors and MOSFETs. This package type allows for efficient heat dissipation and easy mounting on a heatsink for improved thermal management.

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