Abbildungen dienen nur als Referenz
BSC600N25NS3 G
+StücklisteMOSFETs N-Ch 250V 25A TDSON-8 OptiMOS 3
-
HerstellerInfineon-Technologien
-
Herstellerteil #BSC600N25NS3 G
-
Datenblatt BSC600N25NS3 G DataSheet
-
Auf Lager27383
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
Übersicht
Description
Key features of the BSC600N25NS3 G include low on-resistance, which minimizes energy loss during operation, and fast switching capabilities, enhancing overall device efficiency. It is also known for its robustness and reliability, making it suitable for industrial and consumer electronics.
This MOSFET is typically characterized by its ability to manage high currents and voltages, offering designers flexibility in creating energy-efficient systems. Additionally, the component is manufactured by Infineon Technologies, a leading provider of semiconductor solutions, ensuring quality and performance. The BSC600N25NS3 G is thus a critical building block in modern electronic circuit design, contributing to the advancement of energy-efficient technology.
Equivalent
1. STMicroelectronics STW25NM60N
2. ON Semiconductor NTP6413ANG
3. Vishay SiHG25N60E
4. Fairchild (now ON Semiconductor) FQA24N60C
Ensure to verify the specifications such as voltage, current rating, Rds(on), and package type to confirm compatibility, as slight variations might exist between different manufacturers.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 250V, making it suitable for applications requiring moderate voltage levels.
2. Current Capacity: The MOSFET supports a continuous drain current (I_D) of up to 23A, allowing it to handle high current loads.
3. R_DS(on): It boasts a low on-resistance, typically around 60 milliohms, reducing power loss and improving efficiency.
4. Package Type: The component is available in a TO-220 package, which provides good thermal performance and ease of mounting on PCBs.
5. Operating Temperature: It can operate within a wide temperature range, enhancing reliability in diverse environments.
6. Applications: Ideal for use in synchronous rectification, DC-DC converters, and power management systems.
These features make the BSC600N25NS3 G a versatile choice for designers looking for a balance between performance and efficiency in power electronics.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the external circuit. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. It serves as the reference point for the gate voltage.
These pins enable the MOSFET to function as a switch or amplifier in various electronic circuits. The "600N25" part of the name indicates specific electrical characteristics, such as a 600V drain-source voltage rating, but the exact specifics would be detailed in the manufacturer's datasheet.
Manufacturer
Application
1. Switching Power Supplies: Used in AC/DC converters and DC/DC converters for high efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting Systems: Applied in LED drivers and ballasts for energy-efficient lighting solutions.
5. Consumer Electronics: Employed in power management systems for devices like TVs and computers.
Its robustness and low on-resistance make it ideal for high-frequency and high-power applications.