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BSM300C12P3E201
+StücklisteSICFET N-CH 1200V 300A MODULE
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HerstellerRohm Halbleiter
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Herstellerteil #BSM300C12P3E201
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 300A (Tc) |
| Vgs(th)(Max) @ Id | 5.6V @ 80mA |
| Vgs(Max) | +22V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 15000 pF @ 10 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
