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BSO612 - 20V-60V COMPLEMENTARY M
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HerstellerInfineon-Technologien
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Herstellerteil #BSO612CVG
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Datenblatt BSO612CVG DataSheet
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Paket SOIC-8
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Auf Lager9130
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Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta), 2A (Ta) |
| Rds On(Max) @ Id Vgs | 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 20µA, 4V @ 450µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.5nC @ 10V, 16nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 340pF, 400pF @ 25V |
| Power - Max | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
