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BSO612CVG
+StücklisteBSO612 - 20V-60V COMPLEMENTARY M
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HerstellerInfineon-Technologien
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Herstellerteil #BSO612CVG
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Datenblatt BSO612CVG DataSheet
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Paket SOIC-8
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Auf Lager9130
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | SIPMOS® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3A (Ta), 2A (Ta) |
| RdsOn(Max)@IdVgs | 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4V @ 20µA, 4V @ 450µA |
| GateCharge(Qg)(Max)@Vgs | 15.5nC @ 10V, 16nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 340pF, 400pF @ 25V |
| Power-Max | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
