BSS127H6327XTSA2

Abbildungen dienen nur als Referenz

BSS127H6327XTSA2

+Stückliste

MOSFET N-CH 600V 21MA SOT23-3

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Series SIPMOS®
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 21mA (Ta)
DriveVoltage(MaxRdsOn,MinRdsOn) 4.5V, 10V
RdsOn(Max)@Id,Vgs 500Ohm @ 16mA, 10V
Vgs(th)(Max)@Id 2.6V @ 8µA
GateCharge(Qg)(Max)@Vgs 1 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 28 pF @ 25 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
MountingType Surface Mount
SupplierDevicePackage PG-SOT23
Package/Case TO-236-3, SC-59, SOT-23-3
BaseProductNumber BSS127

Übersicht

Description

The BSS127H6327XTSA2 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in electronic circuits. This component is notable for its low on-resistance, high efficiency, and ability to handle moderate voltage and current levels. It typically features a maximum drain-source voltage of around 60V and a continuous drain current rating of about 1.2A.
The BSS127 is commonly used in switching applications, such as power management, signal amplification, and motor control. Its small package size makes it suitable for compact designs in consumer electronics, automotive, and industrial applications.
Additionally, it offers good thermal stability and fast switching capabilities, making it an ideal choice for designs requiring efficient power handling and minimal heat generation. Overall, the BSS127H6327XTSA2 is a versatile and reliable MOSFET that meets the needs of modern electronic devices.

Equivalent

The BSS127H6327XTSA2 is a N-channel MOSFET. Equivalent products include the BSS127, BSS138, and 2N7000, as well as parts from other manufacturers like the BS170 and MPS2222. Always check specific datasheets for matching parameters such as voltage, current ratings, and threshold voltages to ensure compatibility in your application.

Features

The BSS127H6327XTSA2 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 200mA, allowing it to manage moderate loads effectively.
3. R_DS(on): It boasts a low on-resistance, typically around 0.5 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges between 1V to 3V, facilitating low-voltage drive applications.
5. Package Type: It comes in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Fast Switching: Designed for fast switching applications, it offers high efficiency in power management circuits.
Ideal for use in power management, battery-powered devices, and signal switching applications, the BSS127H6327XTSA2 is a versatile choice for electronic designs.

Pinout

The BSS127H6327XTSA2 is an N-channel MOSFET with 8 pins. Its primary functions include switching and amplification in various electronic applications. Specifically, it is designed for low-voltage and low-power applications, making it suitable for load switching, signal amplification, and power management. The device features a low gate threshold voltage, enabling it to be driven by low-voltage logic levels.
The pin configuration typically includes:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which current flows out to the load.
3. Source (S) - The terminal through which current flows into the MOSFET.
4. Drain (D) - Another drain connection for dual-die applications.
5. Source (S) - Another source connection.
6. Gate (G) - Another gate connection for dual-die applications.
7. Unused Pins - May be unconnected or used for thermal dissipation.
Always consult the specific datasheet for detailed pinout and electrical characteristics.

Manufacturer

The BSS127H6327XTSA2 is manufactured by NXP Semiconductors. NXP is a global semiconductor company that specializes in designing and manufacturing a wide range of products, including microcontrollers, processors, and various types of transistors and diodes. The company is known for its focus on automotive, industrial, and Internet of Things (IoT) applications.
NXP Semiconductors was formed in 2006 as a spin-off from Philips, and it has since established itself as a key player in the semiconductor industry, particularly in areas involving secure connectivity and smart applications. With a strong emphasis on innovation, NXP develops solutions that address the growing demand for smart and connected devices across numerous markets. The BSS127H6327XTSA2, specifically, is a MOSFET (metal-oxide-semiconductor field-effect transistor), widely used in various electronic applications for switching and amplification purposes.

Application

The BSS127H6327XTSA2 is a N-channel MOSFET primarily used in low-voltage applications such as power management, switching regulators, and motor drivers. Its compact size and efficient performance make it suitable for consumer electronics, automotive systems, and portable devices. Additionally, it can be employed in LED lighting circuits, battery management systems, and as a general-purpose switch in various electronic devices. The device's low on-resistance and fast switching capabilities enhance energy efficiency, making it ideal for applications requiring reliable and efficient power control.

Package

The BSS127H6327XTSA2 is packaged in a SOT-23 (Small Outline Transistor) package. This surface-mount package is commonly used for transistors and offers a compact design suitable for various electronic applications.

Produkte, die mit BSS127H6327XTSA2 zusammenhängen